Ferromagnetic effects on transition metal doped Ga ₂ O ₃ ‐based semiconductor

Abstract

PACS 61.66.Fn, 75.50.Pp, 76.80.+y Single phases of polycrystalline Ga 2-x TM 2x O 3 (x=0.00, 0.05, 0.10) powder samples were prepared by a standard solid-state reaction method. The X-ray diffraction patterns of the Ga 2-x TM x O 3 (x=0.00, 0.05, 0.10) powders showed no detectable TM phase. All the peaks for the X-ray diffraction patterns of samples belong to the monoclinic (C2/m) lattice of β-Ga 2 O 3 . The lattice parameters for the Ga 1.8 Fe 0.2 O 3 and Ga 1.8 Mn 0.2 O 3 are found to be a 0 = 12.264 Å, b 0 =3.047 Å, c 0 = 5.820 Å, β=103.814° and a 0 = 12.218 Å, b 0 =3.044 Å, c 0 = 5.810 Å, β=103.852° at room temperature. The hysteresis curve at the room temperature for the Ga 2-2x Fe 2x O 3 (x=0.05, 0.10) powders was attributed to a paramagnetic and to a ferromagnetic phase. As the TM doping increased, the magnetization and the ferromagnetic effect were both increased.

In situ observation of secondary phase formation in Fe implanted GaN annealed in low pressure N2 atmosphere

“…Because of the oxidation of Ga as well as of Fe the layer can be regarded as Ga 2 O 3 with inclusions of some iron oxide. This result is in contrast to the results from Lee et al, 23 where Fe doped ␤-Ga 2 O 3 was found to be ferromagnetic.…”

Antiferromagnetic superexchange interaction between Fe3+ ions in Fe3+ doped wide-gap oxide of β-Ga2−Fe O3 (x=0.1, 0.2, 0.3, 0.4)

“…Hojo et al [11] and Lee et al [10] reported the observation of ferromagnetism in the Fe 3 þ doped β-Ga 2 O 3 . In the Mn 2 þ doped β-Ga 2 O 3 , however, Song et al [12] suggested a strong antiferromagnetic superexchange interaction between the doped Mn 2 þ ions.…”

“…In the monoclinic structure of β-Ga 2 O 3 , the Ga 3 þ ions are accommodated in the non-equivalent tetrahedral (A) and octahedral (B) sites. The properties of β-Ga 2 O 3 , such as transportation [4][5][6][7][8][9], magnetism [10][11][12][13][14], and photoluminescence [15][16][17][18], can be greatly affected by the substitution of Ga 3 þ ions with the doped impurities. The previous investigations on the doping of β-Ga 2 O 3 indicate that compared with the Ga 3 þ ion ( $ 0.62 Å), the doped ion with a larger radius, such as Ti 4 þ [6], Cr 2 þ [19,20], Mn 2 þ [21,22], Fe 3 þ [23,24], In 3 þ [25,26], Er 3 þ [27], and Eu 3 þ [28], tends to occupy the B sites, while the doped ion with a smaller radius prefers to sit at the A site, such as Be 2 þ [26], and Si 4 þ [14].…”

Theoretical study of small clusters of manganese-doped gallium oxide: Mn(GaO) n and Mn2(GaO) n with n = 1−7

“…In recent years, the wide gap semiconductors such as ZnO, GaN, and Ga 2 O 3 doped with manganese are found to have high Curie temperature (Dietl et al 2000;Song et al 2006). Specifically, experimental studies on Ga (2-2x) Mn 2x O 3 (x = 0.05, 0.10) polycrystalline material have found a direct relationship between the dopant concentration and the magnetization effects (Lee et al 2004). It was then suggested that a detailed analysis of local environment of Mn is necessary to understand the increase in the magnetization effect with Mn concentration in the oxide lattice.…”