Ferromagnetic Interactions in p- and n-type II–VI Diluted Magnetic Semiconductors

Andrearczyk, T.; Jaroszyński, J.; Sawicki, M.; Khoi, Le Van; Dietl, T.; Ferrand, D.; Bourgognon, C.; Cibert, J.; Tatarenko, S.; Fukumura, Tomoteru; Jin, Zhengwu; Koinuma, Hideomi; Kawasaki, Masashi

doi:10.1007/978-3-642-59484-7_105

Cited by 18 publications

(34 citation statements)

References 15 publications

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“…At the same time, in agreement with theoretical predictions, no ferromagnetic ordering was detected above 1 K in heavily doped n-type (Zn,Mn)O [14]. However, according to experimental results presented in Fig.…”

Section: Quantum Hall Ferromagnetsupporting

confidence: 90%

Ferromagnetic semiconductor heterostructures

Dietl¹

2003

Europhysics News

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Section: Quantum Hall Ferromagnetsupporting

confidence: 90%

Ferromagnetic semiconductor heterostructures

Dietl¹

2003

Europhysics News

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“…It is noted that ultralow temperature magnetoresistance for Mn-doped ZnO showed a hysteresis, suggesting the long range magnetic ordering, without appearance of anomalous Hall effect [26,27], probably due to the small spin-orbit coupling in ZnO.…”

Section: Problems To Be Solvedmentioning

confidence: 99%

Magnetic oxide semiconductors

Fukumura

Toyosaki

Yamada

2005

Semicond. Sci. Technol.

216

107

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Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO 2 and transition metal-doped ZnO is discussed.

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“…We recall that x eff < x and T AF > 0 take into account the presence of antiferromagnetic exchange interaction in II-VI DMS. Figure 5 presents T F /x eff for Ga 1−x Mn x As [14,85,119], p-Zn 1−x Mn x Te [16,120], and quantum wells of p-Cd 1−x Mn x Te [18,33] as a function the Fermi wavevector determined from the value of the hole concentration p assuming the Fermi sphere to be isotropic. The hole concentration was deduced either from the Hall resistance [16,119] or form the Moss-Burstein shift [18,20].…”

Section: Figmentioning

confidence: 99%

Ferromagnetic Semiconductors

2012

Semiconductor Spintronics

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The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some details. Results of a quantitative comparison between experimental and theoretical results, notably for Mn-based III-V and II-VI compounds, are presented. This comparison demonstrates that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures T C , magnetic anisotropy, domain structure, and magnetic circular dichroism. On this basis, chemical trends are examined and show to lead to the prediction of semiconductor systems with T C that may exceed room temperature, an expectation that are being confirmed by recent findings. Results for materials containing magnetic ions other than Mn are also presented emphasizing that the double exchange involving hoping through d states may operate in those systems.

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Ferromagnetic Interactions in p- and n-type II–VI Diluted Magnetic Semiconductors

Cited by 18 publications

References 15 publications

Ferromagnetic semiconductor heterostructures

Ferromagnetic semiconductor heterostructures

Magnetic oxide semiconductors

Ferromagnetic Semiconductors

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