Ferromagnetic properties of GdN thin films studied by temperature dependent circular polarized spectroscopy

Yoshitomi, Hiroaki; Vidyasagar, R.; Kitayama, Shinya; Ohta, Hiromichi; Okubo, Susumu; Fukuoka, Yohei; Sakurai, Takahiro

doi:10.1063/1.4746265

Cited by 12 publications

(15 citation statements)

References 24 publications

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“…It is clear that the magnetization fast increases with the decreased temperature below 50 K. The temperature-dependent magnetization is consistent with previous reports on GdN, 19,25 revealing that the magnetization is from GdN x . The film fabricated at f N2 ¼ 20 sccm shows an upturn of magnetization below 20 K, which is similar to the shoulder observed in the intermediate-doped epitaxial GdN film.…”

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confidence: 91%

Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

Zhong

Duan

et al. 2013

Applied Physics Letters

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Polycrystalline ferromagnetic GdNx films were fabricated at different N2 flow rates (fN2) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at TC. The films at fN2 = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2 = 20 sccm is attributed to large spin polarization of half-metallicity in GdNx with low N vacancies.

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confidence: 91%

Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

Zhong

Duan

et al. 2013

Applied Physics Letters

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“…Combining these observations with the fact that GaN is harder than GdN suggests that thin films or nanoislands of GdN adopt the GaN lattice parameter and are heavily strained. This diversifies the physics of the GdN=GaN interface, because on the one hand, interface strain is likely to affect the band lineup, and on the other hand, the electronic and magnetic properties of GdN are reportedly very sensitive to strain [18,19].…”

Section: Introductionmentioning

confidence: 99%

Schottky Barrier Formation and Strain at the (011)GdN/GaNInterface from First Principles

Kagawa

Raebiger

2014

Phys. Rev. Applied

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GdN and GaN are both insulators, the former being also a ferromagnet. Despite a lattice mismatch of 10.1% and different crystal structures, lattice-matched interfaces where GdN adopts the smaller lattice parameter of GaN can be formed. We study isotropically and epitaxially strained GdN, as well as the nonpolar (011) GdN=GaN interface by first-principles calculation. We show that upon compressive strain (isotropic or biaxial) corresponding to the strain imposed by the GaN lattice, GdN becomes a half-metallic ferromagnet. In the interface calculation, however, no magnetization of GaN at or away from the interface is observed. The interface exhibits a Schottky connection with the GdN Fermi energy 1.19 eV above the GaN valence band (close to midgap); i.e., the system can be used as a rectifier and possibly also for spintronic applications.

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“…We have already confirmed the existence of such two kinds of phases in the other GdN samples. 24 The Curie temperature (T c ) for the 95 nm thickness of 08 GdN has been reported about 37 K by using Arrott plot analysis, 23 therefore, the shift in the resonance field around 40 K (res. 2 in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…2 has just started. 24 However, it requires further investigation. Here, we would like to emphasize that the observation of the two kinds of phases as in the case of Fig.…”

Section: -2mentioning

confidence: 99%

Microscopic properties of degradation-free capped GdN thin films studied by electron spin resonance

Shimokawa

Fukuoka

Fujisawa

et al. 2015

Journal of Applied Physics

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The microscopic magnetic properties of high-quality GdN thin films have been investigated by electron spin resonance (ESR) and ferromagnetic resonance (FMR) measurements. Detailed temperature dependence ESR measurements have shown the existence of two ferromagnetic components at lower temperatures, which was not clear from the previous magnetization measurements. The temperature, where the resonance shift occurs for the major ferromagnetic component, seems to be consistent with the Curie temperature obtained from the previous magnetization measurement. On the other hand, the divergence of line width is observed around 57 K for the minor ferromagnetic component. The magnetic anisotropies of GdN thin films have been obtained by the analysis of FMR angular dependence observed at 4.2 K. Combining the X-ray diffraction results, the correlation between the magnetic anisotropies and the lattice constants is discussed. V C 2015 AIP Publishing LLC.

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Ferromagnetic properties of GdN thin films studied by temperature dependent circular polarized spectroscopy

Cited by 12 publications

References 24 publications

Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

Schottky Barrier Formation and Strain at the (011)GdN/GaNInterface from First Principles

Microscopic properties of degradation-free capped GdN thin films studied by electron spin resonance

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