Ferromagnetic resonance linewidth for NM/80NiFe/NM films (NM=Cu, Ta, Pd and Pt)

Mizukami, Shigemi; Ando, Yasuo; Miyazaki, T.

doi:10.1016/s0304-8853(00)01097-0

Cited by 187 publications

(148 citation statements)

References 11 publications

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“…The second term, so-called a term, denotes the Gilbert damping where a is fixed at a ¼ 0.04. This value is also a typical value for the ferromagnetic metal [21][22][23][24] and the dilute magnetic semiconductors 25 . The third and fourth terms describe the coupling between spins and spin-polarized electric current j. Microscopically the conductionelectron spins interact with local magnetic moments via the Hund's-rule coupling J H or the local exchange interaction J sd .…”

Section: Resultsmentioning

confidence: 68%

Universal current-velocity relation of skyrmion motion in chiral magnets

2013

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Current-driven motion of the magnetic domain wall in ferromagnets is attracting intense attention because of potential applications such as racetrack memory. There, the critical current density to drive the motion is B10 9 -10 12 A m À 2 . The skyrmions recently discovered in chiral magnets have much smaller critical current density of B10 5 -10 6 A m À 2 , but the microscopic mechanism is not yet explored. Here we present a numerical simulation of Landau-Lifshitz-Gilbert equation, which reveals a remarkably robust and universal currentvelocity relation of the skyrmion motion driven by the spin-transfer-torque unaffected by either impurities or nonadiabatic effect in sharp contrast to the case of domain wall or spin helix. Simulation results are analysed using a theory based on Thiele's equation, and it is concluded that this behaviour is due to the Magnus force and flexible shape-deformation of individual skyrmions and skyrmion crystal, which enable them to avoid pinning centres.

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Section: Resultsmentioning

confidence: 68%

Universal current-velocity relation of skyrmion motion in chiral magnets

2013

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“…2a,b, the FMR absorption spectrum (Fig. 2a) is fitted well by À (2I/pDH)dL sym /dH, where I is the absorption coefficient 33 , and V À V offset (Fig. 2b) is fitted well by the sum of V sym L sym and V a-sym L a-sym where V sym and V a-sym are the magnitudes of symmetric and anti-symmetric voltage components.…”

Section: Samplementioning

confidence: 90%

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

2013

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Spin pumping is the phenomenon that magnetization precession in a ferromagnetic layer under ferromagnetic resonance produces a pure spin current in an adjacent non-magnetic layer. The pure spin current is converted to a charge current by the spin-orbit interaction, and produces a d.c. voltage in the non-magnetic layer, which is called the inverse spin Hall effect. The combination of spin pumping and inverse spin Hall effect has been utilized to determine the spin Hall angle of the non-magnetic layer in various ferromagnetic/non-magnetic systems. Magnetization dynamics of ferromagnetic resonance also produces d.c. voltage in the ferromagnetic layer through galvanomagnetic effects. Here we show a method to separate voltages of different origins using (Ga,Mn)As/p-GaAs as a model system, where sizable galvanomagnetic effects are present. Neglecting the galvanomagnetic effects can lead to an overestimate of the spin Hall angle by factor of 8, indicating that separating the d.c. voltages of different origins is critical.

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“…The effective specific interface resistance between NM L;R 1 and NM L;R 2 (Ta) should be high [2,14], so it is expected that J L;R s2 ∼ 0, and the spin backflow J L;R s1 ≈ J L;R s pump ; thus, the damping enhancement should be negligible. However, for Ir=Ta overlayers, when NM R 1 (Ir) is thicker than the spin diffusion length, J R s pump may fully relax within NM R 1 ; now J R s1 ≈ 0, again J R s2 ∼ 0, and the damping should be enhanced.…”

Section: Fig 1 (Color Online)mentioning

confidence: 99%

“…However, a recent theoretical study by Liu et al developed a more complex picture of spin pumping [2], which explains the experimentally observed damping enhancements for various material combinations [14]. In this model the "effective" mixing conductance g eff ↑↓ contains terms that quantify not only relaxation of the spin current within the NM layer g ↑↓ , but also the ability of the spin current to cross the FM-NM interface, characterized by an effective specific interface spin resistance R Ã and relaxation associated with crossing the interface, termed spin memory loss δ. Chen and Zhang very recently proposed an alternate model, based on spin memory loss due to interfacial (Rashba, in their calculations) SOI [1].…”

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confidence: 99%

Interfacial Structure Dependent Spin Mixing Conductance in Cobalt Thin Films

et al. 2015

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Reprinted with permission from the American Physical Society: Physical Review Letters 115, 056601 c (2015) by the American Physical Society. Readers may view, browse, and/or download material for temporary copying purposes only, provided these uses are for noncommercial personal purposes. Except as provided by law, this material may not be further reproduced, distributed, transmitted, modi ed, adapted, performed, displayed, published, or sold in whole or part, without prior written permission from the American Physical Society.Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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Ferromagnetic resonance linewidth for NM/80NiFe/NM films (NM=Cu, Ta, Pd and Pt)

Cited by 187 publications

References 11 publications

Universal current-velocity relation of skyrmion motion in chiral magnets

Universal current-velocity relation of skyrmion motion in chiral magnets

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

Interfacial Structure Dependent Spin Mixing Conductance in Cobalt Thin Films

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