Ferromagnetic Schottky junctions using diamond semiconductors

Ueda, Ken–ichi; Soumiya, T.; Asano, Hidefumi

doi:10.1016/j.diamond.2012.02.015

Cited by 8 publications

(4 citation statements)

References 29 publications

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“…B-doped homoepitaxial diamond films were grown on commercial (100) diamond substrates by microwave plas-ma CVD. Typical acceptor concentration and room temperature mobility was ~10 17 cm -3 and ~1000 cm 2 /Vs, respectively, by Hall measurements [1,2]. CMS films (50-100 nm) were deposited on the diamond films by Ar ion-beam sputtering (IBS) or dual Ar ion-beam assisted sputtering (IBAS).…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand, diamond semiconductors are promising as next-generation high-power devices because of its excellent physical properties such as high band gap, high thermal conductivity, etc. We consider diamond is also an ideal host for spin transport because it is expected to have long spin diffusion length due to its low spin-orbit interactions [1]. However, there are currently no reports on electrical spin injection to diamond.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Half-metallic Co<sub>2</sub>MnSi/diamond Schottky Junctions

Ueda

Nishiwaki

Soumiya

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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We show half-metallic Heusler Co 2 MnSi (CMS) can be grown on diamond semiconductors by using ion-beam assisted sputtering (IBAS) method. Lower temperature growth below ~400°C is the key for obtaining abrupt CMS/diamond interfaces. CMS films on diamond showed negative AMR of ~0.2% at 10 K, suggesting half-metallic natures of the CMS films. Schottky junctions using the CMS/diamond heterostructures formed at 400°C showed clear rectification properties with rectification ratio of more than 10 2 . Schottky barrier heights of the CMS/diamond interfaces were estimated to be ~0.8 eV with reasonable ideality factors (n= ~1.7). These results suggest that CMS is promising spin sources for spin injection to diamond semiconductors.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Half-metallic Co<sub>2</sub>MnSi/diamond Schottky Junctions

Ueda

Nishiwaki

Soumiya

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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“…B-doped homoepitaxial diamond films were grown on commercial diamond (100) Ib substrates by microwave plasma chemical vapor deposition (CVD) [2]. Schottky diodes using various metals (Cu, Ag, Ni) were fabricated on the B-doped diamond films, whose conductivity was originated from unintentionally doped B during the CVD growth.…”

Section: Methodsmentioning

confidence: 99%

High-temperature characteristics of diamond Schottky diodes using various Schottky metals

Kawamoto

Ueda

Nishiwaki

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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High-temperature characteristics and stability of diamond Schottky diodes using various Schottky metals were examined. Cu and Ag/diamond Schottky diodes showed clear rectification up to ~750°C, indicating the diodes can work even at ~750°C. High rectification properties of these diodes at higher temperature are considered to be due to higher Schottky barrier heights (~1.7 eV). Cu Schottky diodes have higher stability up to 700°C probably because of smaller interfacial reactions and/or interdiffusion between Cu Schottky electrodes and diamond.

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“…GaN and diamond are both wide band gap semiconductors with band gap values of 3.44 eV and 5.45 eV, respectively [10][11][12][13][14][15][16][17][18][19]. On the other hand, silicon has an intrinsic band gap of 1.12 eV with electron and hole mobilities of 1400 and 450 cm 2 /Vs, respectively.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Etching of GaN with N2 Gas Addition during CVD Diamond Growth

Mallik,

Krishnamurthy,

Shih

et al. 2024

Preprint

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In the present work, diamond films have been grown on GaN-on-Sapphire substrates by chemical vapor deposition (CVD) with the addition of nitrogen to the standard H2/CH4 precursor recipe. Diamond on GaN materials processing is not straight-forward, as GaN is susceptible to a quasi-pure hydrogen CVD plasma etching. 1%, 3% and 5% N2 gas was gradually added to the H2 gas with fixed 6% CH4 in the recipe to promote the growth of diamond nanocrystals. Different types of microstructures were produced, with addition of nitrogen to the precursor gas recipe. Nitrogen gas changes the diamond film microstructure from faceted to spherical grains, with signs of GaN etching. The sp3 bonded diamond film produced by nitrogen addition was found to be co-deposited along with a considerable amount of other non-diamond carbon phases (D - disordered graphite, G - crystalline graphite, TPA - trans-polyacetylene) and qualitatively all the diamond films were 50% pure (Raman peak ratio Isp3 / ID). The FWHM of the sp3 carbon Raman peak was calculated to be 6.5 cm-1, when there was no nitrogen gas in the precursor recipe, which deteriorates to a large extent after successive addition of N2. Fourier transform infrared spectroscopy (FTIR) showed a strong presence of the nitrogen related defects (peak positions at 1190 and 1299 cm-1) inside the nanocrystalline diamond (NCD) films grown with N2 addition. GaN layer etching from the base substrate by the CVD plasma was clearly evidenced by energy dispersive X-ray spectra (EDS) of the deposited films. Al elemental EDS peaks from the base sapphire substrate were observed for the films grown with nitrogen addition, but no Ga EDS peaks were detected. X-ray diffraction (XRD) micrographs further supported the enhanced GaN etching phenomenon. Nitrogen addition was thus found to be detrimental for growing CVD diamond films over GaN surfaces. The electrical resistivity of the uncoated GaN was initially measured to be 22.2 Ω-cm. However, the resistivity rose to 1.59×106 Ω-cm after the nitrogen assisted film deposition; due to the GaN etching - thereby exposing the underlying insulating sapphire substrate.

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Ferromagnetic Schottky junctions using diamond semiconductors

Cited by 8 publications

References 29 publications

Fabrication of Half-metallic Co<sub>2</sub>MnSi/diamond Schottky Junctions

Fabrication of Half-metallic Co<sub>2</sub>MnSi/diamond Schottky Junctions

High-temperature characteristics of diamond Schottky diodes using various Schottky metals

Enhanced Etching of GaN with N2 Gas Addition during CVD Diamond Growth

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