Ferromagnetic states in theIn1−xMnxSelayered crystal

Abstract

Electron paramagnetic resonance, magnetization, and dynamic magnetic susceptibility have been investigated in the new member of the semimagnetic semiconductors family, In 1−x Mn x Se layered crystal with composition x = 0.0125. The obtained results indicate that two subsystems of impurity manganese ions exist in the examined crystal: the first one inside the crystal layer and the second one in the interlayer space. It is found that at low temperatures, below 77 K, three-dimensional ferromagnetic order arises in the as-grown sample. In the annealed sample, two-dimensional ferromagnetism is observed in the interlayer space.

Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

“…The studies of the III-VI (III -In, Ga; VI -S, Se) crystals doped with d-TM (Mn, Fe) have shown that these semiconductors display nontrivial magnetic properties. In InSe with 1.25 at.% Mn two magnetic subsystems containing Mn ions inside ionic--covalent layers and interlayer van der Waals gaps were discovered [1,2]. The temperature hysteresis of magnetic susceptibility (MS) was observed in In 1−x Mn x Se (x = 0.01; 0.10) DMS in the temperature range 90-290 K [3].…”

Comparative studies of optical absorption, photoluminescence and EPR spectra of PbMnI2 bulk layers and nanocrystals

“…6). The character of angular and temperature dependences suggests that this resonance line is related with Mn atoms substituting lead atoms inside the crystal layer [34]. Full interpretation of this EPR line requires further researches.…”

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

“…It is necessary to underline that the information about phase and real element composition of III-VI DMSs is absent in the cited papers [5][6][7][8][9][10][11][12][13]. Nevertheless, this knowledge is of great importance for regular discussion of the results.…”

“…antiferromagnetic interaction between Mn ions. Two magnetic subsystems were detected in unannealed (x = 0.0125) sample [11,12]. The authors supposed that Mn ions are located both in the ioniccovalent layers and in interlayer Van der Waals space simultaneously and redistribute to the latter during sample annealing.…”

“…Besides, Pekarek et al [13] reported that samples were cut from an ingot grown by Bridgman method supposing that composition of the samples have the same nominal Mn concentration as was put into the charge. Nevertheless, Slyn'ko et al [11,12] noticed non-uniform distribution of Mn in the ingot. Instead of initial composition in the melt about 1 at.% they registered 0.15 at.% at the beginning of the ingot, while near its end Mn concentration was as high as 3.6 at.%.…”