1999
DOI: 10.1103/physrevb.60.15220
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Ferromagnetic transition in EuS-PbS multilayers

Abstract: Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the … Show more

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Cited by 69 publications
(72 citation statements)
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“…EuS and PbS crystallize in the same cubic (rock salt) crystal structure and the lattice mismatch between these two crystals is only 0.5%. Since PbS is a typical diamagnet, magnetically the EuS-PbS multilayers are all-semiconducting ferromagnet-diamagnet nanostructures [23]. EuS-PbS multilayers form PbS multiple quantum wells with fundamental electronic transitions in the infrared [24,25].…”
Section: Ferromagnetic Ultrathin Semiconductor Layersmentioning
confidence: 99%
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“…EuS and PbS crystallize in the same cubic (rock salt) crystal structure and the lattice mismatch between these two crystals is only 0.5%. Since PbS is a typical diamagnet, magnetically the EuS-PbS multilayers are all-semiconducting ferromagnet-diamagnet nanostructures [23]. EuS-PbS multilayers form PbS multiple quantum wells with fundamental electronic transitions in the infrared [24,25].…”
Section: Ferromagnetic Ultrathin Semiconductor Layersmentioning
confidence: 99%
“…For EuS, the magnetic interactions are important only for nearest (z1 ) and next nearest (z2 ) magnetic neighbors. Since the number of magnetic neighbors varies for ions located in different layers, the average number of neighbors depends on the number n of EuS monolayers in the layer, as well as on the growth direction, and on the intermixing profile at the interface [23]. The final expression for the Curie temperature is TC( n) = TC ( b )…”
Section: Ferromagnetic Ultrathin Semiconductor Layersmentioning
confidence: 99%
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