Ferromagnetism in Mn-doped Ge

Cho, Sunglae; Choi, Sang Yong; Hong, Soon Cheol; Kim, Yun-Ki; Ketterson, J. B.; Kim, Bong Jun; Kim, Y. C.; Jung, Jung Hyun

doi:10.1103/physrevb.66.033303

Cited by 286 publications

(171 citation statements)

References 13 publications

Supporting

Mentioning

158

Contrasting

Order By: Relevance

“…As previously observed for Mn-containing samples [16,17] and in accordance with the literature [34,35], the MFM measurements for the Co-free Si and Ge films (both amorphous and annealed up to crystallization temperature) did not exhibit any magnetic contrast. When annealed at high temperatures, the XRD results indicated that non-magnetic phases were present in the films containing Co.…”

Section: Resultssupporting

confidence: 70%

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

Ferri¹,

Pereira-da-Silva

2012

Materials Chemistry and Physics

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 70%

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

Ferri¹,

Pereira-da-Silva

2012

Materials Chemistry and Physics

View full text Add to dashboard Cite

“…Transmission electron microscopy (TEM) measurements by Park et al revealed Mn phase separation in small precipitates (2 to 6 nm in diameter) with higher Mn concentration (10% to 15%) than the surrounding matrix. [9] Cho et al reported ferromagnetism with a T C = 285 K in Mn-doped bulk single crystals, [10] but the magnetic properties of their samples were clearly dominated by the presence of the intermetallic compound Mn 11 Ge 8 . [11,12] These reports of high-T C ferromagnetism in Ge 1−x Mn x are in contrast to recent findings of Li et al, [13,14] who propose to use two ordering temperatures (T * C and T C ) to describe the magnetic coupling in Ge:Mn.…”

Section: Diluted Magnetic Semiconductors (Dms) -Obtained By Doping Sementioning

confidence: 99%

Spin-glass-like behavior of Ge:Mn

Jaeger

Bihler²,

Vallaitis³

et al. 2006

Phys. Rev. B

View full text Add to dashboard Cite

We present a detailed study of the magnetic properties of low-temperature molecular beam epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge 1−x Mn x , with freezing temperatures of T f = 12 K and T f = 15 K for samples with x = 0.04 and x = 0.2, respectively, determined from the difference between field cooled and zero-field cooled magnetization. For Ge 0.96 Mn 0.04 , AC susceptibility measurements show a peak around T f , with the peak position T ′ f shifting as a function of the driving frequency f by ∆T ′ f /[T ′ f · ∆logf ] ≈ 0.06, whereas for sample Ge 0.8 Mn 0.2 a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T f which are in qualitative agreement with the field and zero-field cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures, and that it is not a conventional ferromagnet.

show abstract

“…The Mn x Ge 1−x semiconductor system exhibits ferromagnetic behavior between 25 and 116 K, with a Curie temperature increasing linearly with Mn concentration between 0.6% and 3.5%. 1 Shortly after this initial work was published, Cho et al 2 showed ferromagnetic ordering in Ge 0.94 Mn 0.06 close to room temperature ͑285 K͒. However, the origin of ferromagnetism in this system, grown with molecular beam epitaxy ͑MBE͒ or by Mn implantation, is not yet fully understood and has been related to Mn-rich precipitates, such as Mn 5 Ge 3 and Mn 11 Ge 8 , as well as to magnetic coupling between diluted Mn impurities.…”

mentioning

confidence: 99%

Diluted manganese on the bond-centered site in germanium

Decoster

Cottenier

Wahl³

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.

show abstract

Ferromagnetism in Mn-doped Ge

Cited by 286 publications

References 13 publications

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

Spin-glass-like behavior of Ge:Mn

Diluted manganese on the bond-centered site in germanium

Contact Info

Product

Resources

About