2017
DOI: 10.1063/1.4990548
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Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films

Abstract: With molecular beam epitaxy, we grew uniformly vanadium-doped Bi2Se3 films which exhibit ferromagnetism with perpendicular magnetic anisotropy. A systematic study on the magneto-transport properties of the films revealed the crucial role of topological surface states in ferromagnetic coupling. The enhanced ferromagnetism with reduced carrier density can support quantum anomalous Hall phase in the films, though the anomalous Hall resistance is far from quantization due to high carrier density. The topological s… Show more

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Cited by 34 publications
(31 citation statements)
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“…1b. In our samples, the vanadium that we use as superconducting electrodes is known to form magnetic dopants in Bi 2 Se 3 and eventually a ferromagnetic phase at large concentration [45]. Given that a smooth ion milling of the Bi 2 Se 3 surface is processed before vanadium deposition, favoring vanadium diffusion into the Bi 2 Se 3 crystal, there is presumably a magnetic layer or local magnetic moments at the superconducting interface as well as magnetic moments on the oxidized vanadium side surfaces of the electrodes.…”
Section: Resultsmentioning
confidence: 99%
“…1b. In our samples, the vanadium that we use as superconducting electrodes is known to form magnetic dopants in Bi 2 Se 3 and eventually a ferromagnetic phase at large concentration [45]. Given that a smooth ion milling of the Bi 2 Se 3 surface is processed before vanadium deposition, favoring vanadium diffusion into the Bi 2 Se 3 crystal, there is presumably a magnetic layer or local magnetic moments at the superconducting interface as well as magnetic moments on the oxidized vanadium side surfaces of the electrodes.…”
Section: Resultsmentioning
confidence: 99%
“…For instance, one approach is doping of “bulk” TIs with magnetic species like iron, vanadium, chromium, and manganese. [ 2,5,6-19 ] It is generally argued that bulk dopants replace bismuth in the crystal structure, i.e., they occupy substitutional sites. [ 9,12,13,15,18,20,21 ] The disadvantage of the bulk doping approach is that the dopant's concentration is limited to ≈5–10% only, as at higher concentrations the precipitation of the dopant sets in and the structural integrity of the TI is not preserved in general.…”
Section: Introductionmentioning
confidence: 99%
“…It has previously been demonstrated that MTIs can be realized by magnetically doping three-dimensional TI materials of the (Bi,Sb) 2 (Se,Te) 3 type with transition metals such as Mn [6][7][8] and Fe [9], and more recently Cr and V [10][11][12][13][14]. In both V-and Cr-doped (Bi,Sb) 2 Te 3 epitaxial thin films, the QAH effect has been successfully demonstrated [4,13,15,16] at extremely low temperatures (<100 mK).…”
Section: Introductionmentioning
confidence: 99%