2009
DOI: 10.2528/pierb09082001
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Fet Small Signal Modelling Based on the DST and Mel Frequency Cepstral Coefficients

Abstract: Abstract-In this paper, a new technique is proposed for field effect transistor (FET) small-signal modeling using neural networks. This technique is based on the combination of the Mel frequency cepstral coefficients (MFCCs) and discrete sine transform (DST) of the inputs to the neural networks. The input data sets to traditional neural systems for FET small-signal modeling are the scattering parameters and corresponding frequencies in a certain band, and the outputs are the circuit elements. In the proposed a… Show more

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Cited by 3 publications
(2 citation statements)
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“…As mentioned above, the effects of ambient temperature are introduced into the DC model for I ds using expression (6). The effects of selfheating are incorporated in the model in an implicit manner.…”
Section: Incorporation Of Thermal Effects Into I Ds Current Sourcementioning
confidence: 99%
See 1 more Smart Citation
“…As mentioned above, the effects of ambient temperature are introduced into the DC model for I ds using expression (6). The effects of selfheating are incorporated in the model in an implicit manner.…”
Section: Incorporation Of Thermal Effects Into I Ds Current Sourcementioning
confidence: 99%
“…The simulation of the DC and dynamic characteristics of MESFET and HEMT devices as a function of bias (whether they be static and/or dynamic), temperature and frequency has received much attention over recent years [1][2][3][4][5][6][7][8][9][10][11]. Addressing these three areas with a nonlinear model which provides a good compromise between accuracy, model complexity, and ease of parameter extraction has proved to be troublesome.…”
Section: Introductionmentioning
confidence: 99%