FET upconverter design using load dependent mixing transconductance

Abstract

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A dual-beam asymmetrically scanning leaky-wave antenna by utilizing a HEMT resistive upconverter

“…A NEC NE42484C low-noise HEMT serves as a frequency-mixing device of the upconverter. The HEMT device is chosen for the consideration of lower noise performance and better conversion gain in comparison with a diode [5]. Additionally, the device also has the advantages of low cost and well integration with monolithic IC (MIC) in the future.…”