2019
DOI: 10.3762/bxiv.2019.28.v1
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Few-layer bismuthene for 1-μm ultrafast laser applications

Abstract: Bismuthene, as a new two-dimensional (2D) material made up of diazo metal elements, has drawn massive attention for its unique electronic, mechanical, and quantum properties. However, the nonlinear optical properties of bismuthene in 1-µm region, especially their applications for ultrafast photonics and internal ultrashort pulse dynamics, has seldom been explored yet. In this work, we investigate the few-layer bismuthene characterizations and apply it as a saturable absorber (SA) in a 1-μm ultrafast pulse gene… Show more

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Cited by 2 publications
(3 citation statements)
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References 38 publications
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“…Raman bands at 88.5 and 122.0 cm -1 are assigned to E g (in-plane mode) and A 1g (out-of-plane mode) vibration modes of Bi atoms, respectively. [26][27][28][29] Compared with the Raman bands of pure bismuth metal, typically narrow bands at 70.0 and 97.0 cm -1 , [30] a shift to higher wavenumbers and a pronounced broadening indicate the decrease of long-range ordering herein assigned to the 2D shape. [31] The blue shift of the A 1g vibration mode is larger than that of the E g one, and the E g vibration mode shows a relatively smaller intensity.…”
Section: Synthesis and Characterization Of Bivo 4 /Bi/nifeooh Photoan...mentioning
confidence: 99%
“…Raman bands at 88.5 and 122.0 cm -1 are assigned to E g (in-plane mode) and A 1g (out-of-plane mode) vibration modes of Bi atoms, respectively. [26][27][28][29] Compared with the Raman bands of pure bismuth metal, typically narrow bands at 70.0 and 97.0 cm -1 , [30] a shift to higher wavenumbers and a pronounced broadening indicate the decrease of long-range ordering herein assigned to the 2D shape. [31] The blue shift of the A 1g vibration mode is larger than that of the E g one, and the E g vibration mode shows a relatively smaller intensity.…”
Section: Synthesis and Characterization Of Bivo 4 /Bi/nifeooh Photoan...mentioning
confidence: 99%
“…Based on the two sets of fabricated SA devices, they have modulation depth below 10%, which is sufficient for the generation of mode-locked pulsed lasers [25,27,40,41].…”
Section: Fabrication and Characterization Of Bismuthene/side-polished...mentioning
confidence: 99%
“…Feng et al [40] and Chai et al [41] have recently experimented with Ytterbium-doped fiber. They deposited the bismuthene as SA on microfiber to generate a mode-locked pulse at 1035.84 and 1034.4 nm, respectively.…”
Section: Introductionmentioning
confidence: 99%