The direct Z-scheme photocatalytic heterojunction, possessing
type
II band alignments but simultaneously realizing the spatial separation
of photogenerated electrons and holes (PEHs) and the well-preserved
strong redox ability, is a promising strategy for solving energy and
environmental issues. However, the conventional method of solely relying
on the direction of interfacial electric field (IEF) to determine
the Z-scheme is often different with experiments. Properly evaluating
and constructing the direct Z-scheme remain limited. Herein, combining
hybrid density functional theory and excited state ultrafast dynamics
simulation, we find that the formative factor of the Z-scheme path
comes from two aspects by systematically exploring a series of prototypical
heterojunctions taking X2Y3 ferroelectrics (X:
Al, Ga, In. Y: S, Se, Te) and BCN semiconductors. On the one hand,
the interlayer recombination of PEHs with weak redox ability can be
significantly promoted by the IEF. On the other hand, for PEHs with
strong redox ability, the weak nonadiabatic coupling of interface
transfer channel plays a key role in preserving the high activity
of PEHs, which can extend the reacting time of PEHs from femtosecond
to hundreds of nanosecond scale. This study deepens the understanding
of Z-scheme formation and can accelerate the design of direct Z-scheme
photocatalysts.