Field and temperature dependence of TDDB of ultrathin gate oxide

Yassine, A.; Nariman, H.E.; Olasupo, K.R.

doi:10.1109/55.778152

Cited by 41 publications

(31 citation statements)

References 8 publications

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“…For temperature above T h ϭ330 K, the slope associated with high-temperature region is equal to ⌬E 2 ϭ0.28 eV, corresponding to the effective activation energy of the deep A-center, ⌬E 2 ϭ2.00Ϫ0.124E ox ͓MV/cm͔ is very close to Yassine-Nariman-Olasupos empirical relation for a 3.9-nm oxide: E a ϭ1.9535Ϫ0.119E ox ͓MV/cm͔. 2 For temperatures below T h ϭ330 K, the slope related to the middletemperature region is equal to ⌬E 1 ϭ0.16 eV, corresponding to the effective activation energy of the shallow B-center. Using our model and ⌬E 2 ϭ0.28 eV and ⌬E 1 ϭ0.16 eV, E 1 is estimated to be 0.923 eV, which is very close to model value of 0.92 eV.…”

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confidence: 55%

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Tan

2003

Applied Physics Letters

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confidence: 55%

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Tan

2003

Applied Physics Letters

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“…High temperature measurement of (a) normalized capacitance and (b) conductance for MOS capacitors on ZnO films. 0⋅4 MV/cm and 2⋅7 MV/cm (Yassine et al 1999), respectively. This is also known as Arrhenius plot.…”

Section: Resultsmentioning

confidence: 93%

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

et al. 2007

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Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopy (XPS). ZrO 2 thin films have been deposited on ZnO using microwave plasma enhanced chemical vapour deposition at a low temperature (150°C). Using metal insulator semiconductor (MIS) capacitor structures, the reliability and the leakage current characteristics of ZrO 2 films have been studied both at room and high temperatures. Schottky conduction mechanism is found to dominate the current conduction at a high temperature. Good electrical and reliability properties suggest the suitability of deposited ZrO 2 thin films as an alternative as gate dielectric on ZnO/n-Si heterostructure for future device applications.

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“…1. Researchers attempted to validate the models by conducting tests over long periods of time [20]- [22] and accelerated temperatures [23], [24] to facilitate the collection of breakdown data at lower electric fields. The data reported in [20], [22]- [24] indicated that the logarithm of the time-to-failure was linear with electric fields closer to operating conditions.…”

Section: A Early Models and Breakdown In Thin Oxidesmentioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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Abstract-The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO 2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.

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Field and temperature dependence of TDDB of ultrathin gate oxide

Cited by 41 publications

References 8 publications

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

Ultrathin gate oxide reliability: physical models, statistics, and characterization

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