Field-Controlled Photogeneration and Free-Carrier Transport in Amorphous Selenium Films

Electrical properties of AsxSe1−x (x≤0.05) Mott-barriers

“…The I-V characteristics of our a-As x Se 1 − x devices showed no evidence of trap filling over the entire range of applied bias. The absence of the "stair casing" pattern in the I-V characteristics suggests that the multiple trap states reported by Schein [28] and Tabak [33] are most likely not dominant in our devices.…”

“…Shallow states at 0.14 eV from the valence band and 0.28 eV from the conduction band edge identified by drift mobility experiments have been reported by Tabak [33]. According to Lampert's theory of conduction, the presence of multiple shallow level trap states will lead to a "stair casing" of the I-V pattern indicated by path b-d-e in Fig.…”

Synthesis and charge carrier photogeneration in novel ladder polymers containing 2,5-thienylene units

“…Lacking experimental data which cover a wide range of the applied electric ®eld, the results are analysed within the formalism of Tabak and Warter. 18 In this formalism, the rate at which a bound pair dissociates into a free ion pair is treated as a thermally activated process with an activation energy which is in¯uenced by the Poole±Frenkel effect. The Tabak±Warter expression for photo-generation ef®-ciency is therefore:…”

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

“…which differs only slightly from the expression based on the above physical definition [36] of residual…”