Field dependence of the rate of thermal emission of holes from the V Ga S As complex in gallium arsenide

Defect engineering using microwave processing in SiC and GaAs

“…The primary process, which determines defect production under irradiation, is a displacement of the atoms from the sites of the lattice. But the energy of a photon with frequency 2.45 GHz is about 10 −5 eV only; the threshold displacement energies in GaAs and SiC are (8-28) eV [74] and (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35) eV [75], respectively. Therefore such a channel of microwave-induced modification of defect subsystem is unreal.…”

“…For this purpose, we should take into account that the reported data for the main trap parameters vary over a wide range; in particular, the difference between the values of capture cross sections can be as large as four orders of magnitude [34]. One of the possible reasons for such a large spread of parameters is the strong dependence of the charge thermal emission on the electric field strength [35,36] caused by (a) decrease in ionization energy due to the Pool-Frenkel effect or, for example, Coulombic interactions of defect [37] and (b) change in the σ n magnitude [38]. As a rule, the change in (E c − E t ) comprises several tens of meV, and the change in the capture cross-section reaches several orders of magnitude.…”