2023
DOI: 10.1111/jmi.13233
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Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors

Aissatou Diagne,
Luis Gonzalez Garcia,
Samba Ndiaye
et al.

Abstract: We investigate the microscopic behaviour of hydrogen‐containing species formed on the surface of III‐N semiconductor samples by the residual hydrogen in the analysis chamber in laser‐assisted atom probe tomography (APT). We analysed AlGaN/GaN heterostructures containing alternate layers with a thickness of about 20 nm. The formation of H‐containing species occurs at field strengths between 22 and 26 V/nm and is independent of the analysed samples. The 3D APT reconstruction makes it possible to map the evolutio… Show more

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