2022
DOI: 10.1103/physrevb.106.174429
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Field-driven domain wall motion in ferrimagnetic nanowires

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Cited by 6 publications
(3 citation statements)
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“…An anisotropy gradient of 100 fJ (Vm) À1 and an insulating layer thickness of %1 nm are considered, which are comparable to experimental report. [34,35] The dynamics of the FiM skyrmion are investigated by solving the LLG equation: [36][37][38][39] , where μ s is the saturation moment and γ eff = (γ 1 þ γ 2 )/2 with γ 1 = 1.1 and γ 2 = 1.0. We set J = 8 Â 10 À22 J, D = 1.6 mJ m À2 the damping coefficient α = 0.2, the initial PMA strength on the left side K 0 = 0.28 MJ m À3 , and the PMA gradient dK/dx = 240-400 GJ m À4 , which are comparable to those of compound GdFeCo.…”
Section: Introductionmentioning
confidence: 99%
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“…An anisotropy gradient of 100 fJ (Vm) À1 and an insulating layer thickness of %1 nm are considered, which are comparable to experimental report. [34,35] The dynamics of the FiM skyrmion are investigated by solving the LLG equation: [36][37][38][39] , where μ s is the saturation moment and γ eff = (γ 1 þ γ 2 )/2 with γ 1 = 1.1 and γ 2 = 1.0. We set J = 8 Â 10 À22 J, D = 1.6 mJ m À2 the damping coefficient α = 0.2, the initial PMA strength on the left side K 0 = 0.28 MJ m À3 , and the PMA gradient dK/dx = 240-400 GJ m À4 , which are comparable to those of compound GdFeCo.…”
Section: Introductionmentioning
confidence: 99%
“…The dynamics of the FiM skyrmion are investigated by solving the LLG equation: [ 36–39 ] Sit=γiMi(1+α2)Si×[ Hi+α(Si×Hi) ]$$\frac{\partial S_{i}}{\partial t} = - \frac{\left(\gamma\right)_{i}}{M_{i} \left(\right. 1 + \left(\alpha\right)^{2} \left.\right)} S_{i} \times \left[\right.…”
Section: Introductionmentioning
confidence: 99%
“…such as in data storage devices [1][2][3] and logic operations [4,5]. Conventionally, there are several steering knobs, namely, magnetic fields [6][7][8][9][10][11], microwaves [12][13][14][15], and spin-polarized currents [16][17][18][19], to steer DW in magnetic nanostructures. But these steering knobs are suffering from certain limitations in device applications.…”
Section: Introductionmentioning
confidence: 99%