Field effect-induced quasi-one-dimensional electron transport in GaAs/AlxGa1−xAsheterostructures

Abstract

We describe an approach to realize quasi-one-dimensional electron gases using an undoped GaAs/AlxGa1−xAsheterostructure. It is demonstrated that with a combination of ion implanted ohmic regions and a narrow top gate, a quasi-one-dimensional electron gas with a very high electron density can be formed. The width of the narrow top gate is varied between 0.4 and 1.0 μm. The wires are characterized by low temperature magnetotransport experiments. The effective wire width is found to be comparable to the gate width. The high mobility of about 95 m2/V s is only 5%–10% less than that obtained in a two-dimensional electron gas of the same material and is maintained at low temperatures.

Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene

“…Apart from local depletion it has been demonstrated that a positive voltage applied to a gate electrode on top of a suitable undoped GaAs/AlGaAs heterostructure induces an electron gas. The technique has been used to prepare field-effect induced quantum wires with a minimum width of 0.4 µm and a length of 6 µm [7].…”