Field-Effect Mobility Enhancement in Low Temperature ALD ZnO Thin-film Transistors via Contact Defects Engineering Suitable for BEOL Integration

Shen, Mei; Lu, Jiqing; Wang, Wenhui; Lan, Jun; Liang, Jinxuan; Zhou, Feichi; Lin, Longyang; Li, Yida

doi:10.1109/edtm53872.2022.9798319

Cited by 1 publication

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“…As the microelectronics industry has transitioned to the use of high permittivity (high-k) gate dielectrics for the transistor stack in microelectronics devices, the deposition of high-k gate dielectrics oxides (e.g., Al 2 O 3 , In 2 O 3 , ZnO, ZrO 2 , HfO 2 , rare earth oxides) becomes the most widely studied field in the ALD technology, [24] and In 2 O 3 and ZnO can also be used as semiconducting layers in the transistors. [25][26][27][28] When the scale of SiO 2 metal oxide semiconductor field effect transistors is reduced to 1 nm or less in thickness, high and unfavorable tunnel current will appear in the transistors. If high-k oxides are used, the gate dielectrics can be fabricated with higher physical thickness under the required capacitance density, so the tunneling current in transistors can be reduced.…”

Section: Ald In High-k Gate Dielectricsmentioning

confidence: 99%

Emerging Atomic Layer Deposition Technology toward High‐k Gate Dielectrics, Energy, and Photocatalysis Applications

2023

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The precise design and efficient development of nanoscale materials at the atomic level has enabled high‐end renewable energy storage, conversion devices, and large‐scale environmental governance equipment. Atomic layer deposition (ALD) is a new vapor‐phase technology for precise surface thin‐film preparation, and is outstanding with self‐limiting reactions, large deposition area, adjustable film composition, film uniformity, angstrom thickness control and low temperature. With these characteristics, ALD plays an important role in many industry and research fields. This review briefly introduces the principle, main technical advantages and applications of ALD, including high‐k gate dielectrics, solar cells, fuel cells, and photocatalysis. The progress of the ALD technology in preparation and application of photocatalyst is emphatically reviewed, and the large‐scale application of ALD in photocatalytic thin‐film materials is prospected.This article is protected by copyright. All rights reserved.

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