Field effect on the impact ionization rate in semiconductors

Redmer, R.; Madureira, Justino R.; Fitzer, N.; Goodnick, Stephen M.; Schattke, W.; Schöll, Eckehard

doi:10.1063/1.371941

Cited by 20 publications

(14 citation statements)

References 28 publications

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“…Time-resolved reflectivity changes of (100)-oriented intrinsic GaAs for the case of excitation with a 50-fs pulse at 2 eV exhibiting oscillations due to the coherent phonons. After Cho et al, 1990. tures (Redmer et al, 2000). Formally similar processes occur in doped semiconductor nanostructures, where the Coulomb interaction leads to transitions between different subbands.…”

Section: H Carrier-carrier Quantum Kineticsmentioning

confidence: 87%

Theory of ultrafast phenomena in photoexcited semiconductors

2002

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The authors review the physics of ultrafast dynamics in semiconductors and their heterostructures, including both the observed experimental phenomena and the theoretical description of the processes. These are probed by ultrafast optical excitation, generating nonequilibrium states that can be monitored by time-resolved spectroscopy. Light pulses create coherent superpositions of states, and the dynamics of the associated phase relationships can be directly investigated by means of many-pulse experiments. The commonly used experimental techniques are briefly reviewed. A variety of different phenomena can be described within a common theoretical framework based on the density-matrix formalism. The important interactions of the carriers included in the theoretical description are the phonon interactions, the interactions with classical and quantum light fields, and the Coulomb interaction among the carriers themselves. These interactions give rise to a strong interplay between phase coherence and relaxation, which strongly affects the nonequilibrium dynamics. Based on the general theory, the authors review the physical phenomena in various semiconductor structures including superlattices, quantum wells, quantum wires, and bulk media. Particular results which have played a central role in understanding the microscopic origins of the relaxation processes are discussed in detail. CONTENTS

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Section: H Carrier-carrier Quantum Kineticsmentioning

confidence: 87%

Theory of ultrafast phenomena in photoexcited semiconductors

2002

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“…According to Ref. [21], when the system is under applied bias, the impact ionization model must be corrected, however the deviations occur at high electric fields and only for lower energies close to the threshold E th . Yet, in our case, the same field regime is achieved at higher energies (or voltages) where the models that include the electric field converge to Eq.…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence on-off ratio control of n−i−n GaAs/AlGaAs-based resonant tunneling structures

et al. 2018

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We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from higher to lower values and the EL on-off ratio is enhanced by two orders of magnitude compared to the current on-off ratio. By combining the EL and the current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current voltage and the EL, we are able to tune the EL on-off ratio by up to six orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current of the on and off states. This electroluminescence, combined with the unique RTD properties, such as the negative differential resistance and high-frequency operation, enables the development of high-speed functional optoelectronic devices and optical switches.

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“…where E is the electron energy, C = 93.659 · 10 10 s −1 and a = 4.743 for GaAs 24 , and E th is the threshold energy above which the ionization process is triggered. By considering energy and momentum conservation during the inter-and intra-subband transitions involved in the ionization processes, as illustrated in the inset of Fig.…”

Section: Device Layout and Roommentioning

confidence: 99%

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

Hartmann

Pfenning

Dias

et al. 2017

Journal of Applied Physics

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We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The inversion bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms and thus could be applied as an alternative route towards optoelectronic applications of tunneling devices.

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Field effect on the impact ionization rate in semiconductors

Cited by 20 publications

References 28 publications

Theory of ultrafast phenomena in photoexcited semiconductors

Theory of ultrafast phenomena in photoexcited semiconductors

Electroluminescence on-off ratio control of n−i−n GaAs/AlGaAs-based resonant tunneling structures

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

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