Field-effect transistor based on atomically flat rutile TiO2

Katayama, Masao; Ikesaka, Shinya; Kuwano, Jun; Yamamoto, Yuichi; Koinuma, Hideomi; Matsumoto, Yuji

doi:10.1063/1.2404980

Cited by 48 publications

(44 citation statements)

References 23 publications

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“…Using these formulas we estimated the mobility to be ϳ0.2 cm 2 V −1 s −1 , consistent with values reported for single-crystalline TiO 2 films. 17 Finally, an on/off ratio of approximately 3 was obtained by changing the gate voltage from −20 to + 10 V; the saturation transconductance was found to be ϳ3 nS. This low on/off ratio compared with the threshold voltage may result from the presence of contact resistances that are not insignificant compared to the resistance of the nanowire.…”

Section: ͑1͒mentioning

confidence: 99%

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

Baik

Kim

Larson

et al. 2008

Applied Physics Letters

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We report a facile method for synthesizing single-crystal rutile TiO2 nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO2 nanowires to be n-type semiconductors with conductance activation energy of ∼58meV.

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Section: ͑1͒mentioning

confidence: 99%

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

Baik

Kim

Larson

et al. 2008

Applied Physics Letters

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“…4 Titanium dioxide ͑TiO 2 ͒ is a well known member of the MOxS family and one of the most promising materials for application in hybrid photovoltaics such as dye-sensitized solar cells ͑DSCs͒. 2,5 Apart from its use in DSCs, TiO 2 has also been explored in numerous other applications.…”

mentioning

confidence: 99%

TiO 2 thin-film transistors fabricated by spray pyrolysis

Wöbkenberg¹,

Ishwara²,

Nelson³

et al. 2010

Applied Physics Letters

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We demonstrate electron transporting thin-film transistors based on TiO2 films deposited from solution by spray pyrolysis under ambient atmosphere. The field-effect electron mobility is found to depend strongly on the device architecture and the type of source and drain electrodes employed. For optimized transistors a maximum mobility value of 0.05 cm2/V s is obtained. Furthermore, the TiO2 transistors show air-stable operating characteristics with a shelf life time of several months. This is the only report on electron transporting transistors based on thin-films of TiO2 deposited by spray pyrolysis. Such devices could be used for the study of charge carrier transport in TiO2 and other related materials.

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“…In 2006, Katayama et al [28] first reported a TiO 2 TFT with the rutile structure. A top-gate transistor structure with an MgO insulating buffer between TiO 2 semiconductor and amorphous LaAlO 3 gate insulator, was fabricated on ultra-smooth, rutile, single crystal substrate.…”

Section: Operation Of the Tfts And Important Device Parametersmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

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The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

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Field-effect transistor based on atomically flat rutile TiO2

Cited by 48 publications

References 23 publications

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

TiO 2 thin-film transistors fabricated by spray pyrolysis

Overview of electroceramic materials for oxide semiconductor thin film transistors

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