Field-Effect Transistors

Blicher, Adolph; Kalish, I.H.

doi:10.1016/b0-12-227410-5/00242-8

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…However, it requires significant temperatures. Implementation of ions produces more doped materials with few impurities, allows for precise control over doping levels and guarantees consistency of doping, whereas their disadvantages are the high cost and energy demands [42]. Leveraging the phenomenon of self-doping biomass as a potential source of precursors appears to be an attractive solution due to its abundant availability and eco-friendly nature.…”

Section: Conducted Methods and Synthesized N-doped Activated Carbonmentioning

confidence: 99%

Exploring the versatile production techniques and applications of nitrogen-doped activated carbon

Joia,

Atamanov,

Umbetkaliev

et al. 2024

Therm. Sci. Eng.

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Carbon based materials are really an integral component of our lives and widespread research regarding their properties was conducted along this process. The addition of dopants to carbon materials, either during the production process or later on, has been actively investigated by researchers all over the world who are looking into how doping can enhance the performance of materials and how to overcome the current difficulties. This study explores synthesis methods for nitrogen-doped carbon materials, focusing on advancements in adsorption of different pollutants like CO2 from air and organic, inorganic and ions pollutants from water, energy conversion, and storage, offering novel solutions to environmental and energy challenges. It addresses current issues with nitrogen-doped carbon materials, aiming to contribute to sustainable solutions in environmental and energy sciences. Alongside precursor types and synthesis methods, a significant relationship exists between nitrogen content percentage and adsorption capacity in nitrogen-doped activated carbon. Nitrogen content ranges from 0.64% to 11.23%, correlating with adsorption capacities from 0.05 mmol/g to 7.9 mmol/g. Moreover, an electrochemical correlation is observed between nitrogen atom increase and specific capacity in nitrogen-doped activated carbon electrodes. Higher nitrogen percentage corresponds to increased specific capacity and capacity retention. This comprehensive analysis sheds light on the potential of nitrogen-doped carbon materials and highlights their significance in addressing critical environmental and energy challenges.

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Section: Conducted Methods and Synthesized N-doped Activated Carbonmentioning

confidence: 99%

Exploring the versatile production techniques and applications of nitrogen-doped activated carbon

Joia,

Atamanov,

Umbetkaliev

et al. 2024

Therm. Sci. Eng.

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“…R S eff and R D eff is the effective resistance of sources and drain terminals and G chi channel conductance computed as a popular methodology [49] as eq. ( 53)…”

Section: Otft Equivalent Circuit For Transient Analysismentioning

confidence: 99%

Numerical Simulation, Electrostatic and Physical Compact Modeling of C8-BTBT-C8 Organic Thin Film Transistor

Shubham Dadhich,

Garima Mathur,

A.D.D. Dwivedi

2024

IJNeaM

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This paper presents numerical simulation and compact modeling of 2,7-Dioctyl {1} benzothieno {3,2-b}{1} benzothiophene (C8-BTBT-C8) organic semiconductor-based TFT. It shows the entire modeling process flow of this organic semiconductor (OSC) and tests the device realization using a ring oscillator. The paper comprises OSC characterisation, band-gap modeling, electrostatic modeling, and capacitance modeling. The TCAD model consists of the Hopping and Pool Frenkel premise and characterizes the Density of State (DOS) for traps in deep and tail states. The findings from this research provide valuable information for improving OTFT models, enhancing their predictive accuracy, and advancing the understanding of organic semiconductor device behavior. The electrostatics demonstrate device structure dependency

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Field-Effect Transistors

Cited by 2 publications

References 2 publications

Exploring the versatile production techniques and applications of nitrogen-doped activated carbon

Exploring the versatile production techniques and applications of nitrogen-doped activated carbon

Numerical Simulation, Electrostatic and Physical Compact Modeling of C8-BTBT-C8 Organic Thin Film Transistor

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