Field-Effect Transistors from Lithographically Patterned Cadmium Selenide Nanowire Arrays

Ayvazian, Talin; Xing, Weiyi; Yan, Wenbo; Penner, Reginald M.

doi:10.1021/am301302b

Cited by 12 publications

(25 citation statements)

References 62 publications

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“…The charge carrier concentration ( n e ) was calculated from the threshold voltage ( V th ) using eq and was found to be n e = (2.7 × 10 18 ) – (4.8 × 10 18 ) cm –3 . Both our μ and n e values are in the range of those reported for other CdSe nanowires. ,, Specifically, reported μ values range between 1.9 × 10 –4 cm 2 V –1 s –1 (ref ) and 0.77 cm 2 V –1 s –1 (ref ). These values are much smaller than that of bulk CdSe, μ = 650 cm 2 V –1 s –1 .…”

Section: Resultssupporting

confidence: 80%

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Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

et al. 2017

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One-dimensional semiconductor nanostructures, such as nanowires (NWs), have attracted tremendous attention due to their unique properties and potential applications in nanoelectronics, nano-optoelectronics, and sensors. One of the challenges toward their integration into practical devices is their large-scale controlled assembly. Here, we report the guided growth of horizontal CdSe nanowires on five different planes of sapphire. The growth direction and crystallographic orientation are controlled by the epitaxial relationship with the substrate as well as by a graphoepitaxial effect of surface nanosteps and grooves. CdSe is a promising direct-bandgap II–VI semiconductor active in the visible range, with potential applications in optoelectronics. The guided CdSe nanowires were found to have a wurtzite single-crystal structure. Field-effect transistors and photodetectors were fabricated to examine the nanowire electronic and optoelectronic properties, respectively. The latter exhibited the fastest rise and fall times ever reported for CdSe nanostructures as well as a relatively high gain, both features being essential for optoelectronic applications.

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Section: Resultssupporting

confidence: 80%

“…Both our μ and n e values are in the range of those reported for other CdSe nanowires. 29 , 33 , 43 Specifically, reported μ values range between 1.9 × 10 –4 cm 2 V –1 s –1 (ref ( 43 )) and 0.77 cm 2 V –1 s –1 (ref ( 29 )). These values are much smaller than that of bulk CdSe, 44 μ = 650 cm 2 V –1 s –1 .…”

Section: Resultsmentioning

confidence: 99%

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

et al. 2017

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“…Five tn-ELJ with different w CdSe values, shown in Figure f–j, were investigated in this study. In recent prior work, ,,− the properties of the nc-CdSe produced by an identical procedure were characterized by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy. Electrodeposited nc-CdSe is crystalline, possesses a cubic crystal structure, and has a mean grain diameter of ≈5 nm. ,,− …”

Section: Resultsmentioning

confidence: 99%

“…One possible mechanism accounting for a dead layer adjacent to metal contacts is the physical diffusion/migration of electrons and/or holes to these metal contacts and their subsequent radiationless recombination. In this case, the thickness of the dead layers should approximate the minority carrier diffusion length, estimated to be 30-50 nm based upon our prior measurements of carrier mobilities [2] and minority carrier lifetimes [25] in electrodeposited nc-CdSe. A second possibility, also suggested by others, [36] is that radiationless recombination near a contact is a symptom of poorer CdSe quality, in terms of impurities and crystallinity.…”

Section: Electroluminescence Spectra and Mechanismsmentioning

confidence: 99%

Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Qiao

Dutta

et al. 2016

ACS Nano

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The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) is described, and the electroluminescence (EL) properties of these devices are characterized. The lithographically patterned nanowire electrodeposition process is first used to prepare long (millimeters), linear, nanocrystalline CdSe nanowires on glass. The thickness of these nanowires along the emission axis is 60 nm, and the width, wCdSe, along the electrical axis is adjustable from 100 to 450 nm. Ten pairs of nickel-gold electrical contacts are then positioned along the axis of this nanowire using lithographically directed electrodeposition. The resulting linear array of nickel-CdSe-gold junctions produces EL with an external quantum efficiency, EQE, and threshold voltage, Vth, that depend sensitively on wCdSe. EQE increases with increasing electric field and also with increasing wCdSe, and Vth also increases with wCdSe and, therefore, the electrical resistance of the tn-ELJs. Vth down to 1.8(±0.2) V (for wCdSe ≈ 100 nm) and EQE of 5.5(±0.5) × 10(-5) (for wCdSe ≈ 450 nm) are obtained. tn-ELJs produce a broad EL emission envelope, spanning the wavelength range from 600 to 960 nm.

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“…Because of their versatile physical characteristics and excellent one-dimensional structural properties, polymer nanowires (NWs) have attracted considerable attention as building blocks for important elements of integrated photonic and electronic devices, − including photodetectors, optical waveguides, nanometer-scale lasers, light-emitting diodes, and field-effect transistors. Among these devices, nanoscale photodetectors that convert optical signals to electrical signals on the nanometer scale have aroused great interest as key functional components for on-chip information communication and processing.…”

mentioning

confidence: 99%

Single Crossed Heterojunction Assembled with Quantum-Dot-Embedded Polyaniline Nanowires

et al. 2016

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Nanoscale photodetectors are highly attractive for their potential applications in integrated optoelectronic devices. One-dimensional flexible nanowire-based photodetectors are especially important because low-dimensional nanostructures are fascinating platforms for manipulating electrons and photons at the subwavelength scale. Herein, we report an ultraviolet−visible photodetector based on a single crossed heterojunction assembled with quantum-dot-embedded polyaniline nanowires. The quantum-dot-embedded polyaniline nanowires are fabricated by a direct drawing method. Based on these inorganic−organic hybrid nanowires, room-temperature, high-performance, high-speed photodetectors are constructed. The fabricated photodetectors show an excellent light response in the wavelength region of 365 to 550 nm, with an external quantum efficiency of 10 5 %, a responsivity of 10 3 A/W, an on−off switching ratio of 10, and a short response/recovery time of 9 ms. These excellent performance characteristics are attributed to the abundant inorganic−organic interfaces and the intermediate radiative reabsorption process. The spectral response range can be readily tuned to a desired waveband by changing the emission wavelength of the quantum dots. This cross-heterojunction-based photodetector may have potential applications in integrated photonic and optoelectronic devices.

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Field-Effect Transistors from Lithographically Patterned Cadmium Selenide Nanowire Arrays

Cited by 12 publications

References 62 publications

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Single Crossed Heterojunction Assembled with Quantum-Dot-Embedded Polyaniline Nanowires

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