Field effective band alignment and optical gain in type-I Al0.45Ga0.55As/GaAs0.84P0.16 nano-heterostructures

Nirmal, H. K.; Anjum, S. G.; Lal, Pyare; Rathi, Amit; Dalela, S.; Siddiqui, M. J.; Alvi, P. A.

doi:10.1016/j.ijleo.2016.05.019

Cited by 30 publications

(2 citation statements)

References 14 publications

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“…The peak optical gain within the TE mode for the transformed type‐I InAs/AlSb is found around 2800 cm −1 within the MIR region at a doping concentration of 1.5 × 10 18 cm −3 . Recently, such a magnitude of TE gain in binary transformed heterostructure of type‐I InAs/AlSb was found to be equivalent to TM gain in a ternary heterostructure of type‐I AlGaAs/GaAsP . The observations of Figs.…”

Section: Resultsmentioning

confidence: 92%

Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

Alvi¹

2017

Physica Status Solidi (b)

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Most of the detailed studies have been directed toward III–V semiconductors based type‐I and type‐II heterostructures. But, the transformations between type‐I and type‐II heterostructures have not been well studied so far. In this paper, it is reported that the proper doping in a specific region of well known type‐II InAs/AlSb nanoscale heterostructure can transforms it into the type‐I heterostructure. Moreover, this doping also improves the interband optical gain of the transformed type‐I heterostructure as compared to the original type‐II structure. The eight band k · p model based self‐consistent calculations have been performed to calculate the band structure and the carrier's wavefunctions. On the basis of outcomes from the calculations, it is reported that the optimized interband optical gain (within TM mode) of the transformed heterostructure is almost ten times as compared to the other heterostructures operating in mid‐infrared (MIR) region. Thus, the transformed heterostructure may be an important heterostructure made of InAs/AlSb material system for MIR wavelength region. Hence, the proper doping can transform type‐II heterostructure made of an optically inactive material system into type‐I structure, a very efficient optically active heterostructure (referred to as gain structure), which can provide technologically important MIR wavelength range.

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Section: Resultsmentioning

confidence: 92%

Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

Alvi¹

2017

Physica Status Solidi (b)

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“…Heterostructures based optoelectronic devices such as laser diodes (LDs), LEDs (or OLEDs) and photdetectors usable in MIR spectroscopy, pollution monitoring, and gases leakage sensing have been very attractive for researcehrs working in the areaof optoelectronics [1][2][3][4][5]. However, the emergence of technology over the last decades has rapidly brought out the development of organic light-emitting diodes (OLEDs) [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Alq3/Alq3:NTCDA/NPB heterostructure based OLED

Sharma

Kattayat²,

Josey³

et al. 2023

J. Phys.: Conf. Ser.

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In this article an attempt has been made to design the meshing structure of Alq3/Alq3:NTCDA/NPB layers based OLED and to determine the the optical characteristics such as PL (photo luminescence), emission rate, and normal spectral density. The studies of all these parameters suggest that the heterostructure system based OLED is useful for the emission of high intense radiations in the visible region (wavelength region ~500 nm).

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