Field electron emission of diamond films on nanocrystalline diamond coating by CVD method

Cai, R.Q; Chen, Guanghua; Song, Xuemei; Xing, Guangjian; Feng, Zhenjian; He, Dingyong

doi:10.1007/bf03183981

Cited by 4 publications

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Effects of carbon diffusing field in alloy solvent on the growth of tower-shape diamond single crystal

Xiao

Tian

et al. 2009

Chin. Sci. Bull.

View full text Add to dashboard Cite

High-quality type-Ib tower-shape diamond single crystals were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250-1450°C. The (100) face of seed crystal was used as the growth face, and FeNiMnCo alloy was used as the solvent/catalyst. Two kinds of carbon diffusing fields (type-B and type-G) were simulated by finite element method (FEM). Using the two kinds of carbon diffusing fields, many diamond single crystals were synthesized. The effects of carbon diffusing fields on the crystal quality and β value (the ratio of height to diameter of diamond crystal) were studied. The results show that using type-B diffusing field, considerable inclusions appeared in tower-shape diamond crystals with high β values; however, using type-G diffusing field, inclusions were reduced markedly in high β values tower-shape diamond crystals, and the crystal, up to 0.6 carat in weight and 5.3 mm in size, was synthesized. Experimental phenomena were explained well with the help of the FEM.tower-shape diamond, FEM, high pressure and high temperature, diffusing field Citation:Xiao H Y, Ma H A, Tian Y, et al. Effects of carbon diffusing field in alloy solvent on the growth of tower-shape diamond single crystal.

show abstract

Effects of carbon diffusing field in alloy solvent on the growth of tower-shape diamond single crystal

Xiao

Tian

et al. 2009

Chin. Sci. Bull.

View full text Add to dashboard Cite

show abstract

Synthesis of high quality type-Ib diamond crystals in carats grade

Xiao

Jia

et al. 2010

Chin. Sci. Bull.

View full text Add to dashboard Cite

High quality type-Ib tower-shape gem-diamond crystals in carats grade were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250-1450°C. The relationship between the growth time and the weight of growth diamond has been gained. The faces of {110} and {113} were found in the synthetic diamond crystals frequently. We found that the relative growth rate of {113} face was descending with the increase of growth temperature, and that of {110} face had no obvious change with the increase of the growth temperatures and the growth time. In the work, the crystal defects were studied carefully, and the reasons for the appearance of the defects were also obtained. Some diamond crystals have been polished into the anvil of DAC (Diamond Anvil Cell) and the diamond jewelry. Compared with natural diamond crystal, synthetic diamond crystal has the merits such as small grinding quantity, low cost, etc., so it can be widely used in super high pressure field and gemstone industry. diamond, high pressure and high temperature, carat Citation:Xiao H Y, Jia X P, Ma H A, et al. Synthesis of high quality type-Ib diamond crystals in carats grade.

show abstract

Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate

Chen

Cai²,

Song

et al. 2004

Materials Science and Engineering: B

View full text Add to dashboard Cite

Field electron emission of diamond films on nanocrystalline diamond coating by CVD method

Cited by 4 publications

References 13 publications

Effects of carbon diffusing field in alloy solvent on the growth of tower-shape diamond single crystal

Effects of carbon diffusing field in alloy solvent on the growth of tower-shape diamond single crystal

Synthesis of high quality type-Ib diamond crystals in carats grade

Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate

Contact Info

Product

Resources

About