Field electron emission of layered Bi2Se3 nanosheets with atom-thick sharp edges

Abstract

Field electron emission properties of solution processed few-layer Bi₂Se₃ nanosheets are studied for the first time, which exhibit a low turn-on field of 2.3 V μm(-1), a high field enhancement factor of up to 6860 and good field emission stability. This performance is better than that of the as reported layered MoS₂f sheets and is comparable to that of single layer graphene films. The efficient field emission behaviours are found to be not only attributed to their lower work function but also related to their numerous sharp edges or protrusion decorated structure based on our simulation results. Besides, the contribution of possible two-dimensional electron gas surface states of atom-thick layered Bi₂Se₃ nanosheets is discussed in this paper. We anticipate that these solution processed layered Bi₂Se₃ nanosheets have great potential as robust high-performance vertical structure electron emitters for future light weight and highly flexible vacuum micro/nano-electronic device applications.

Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics

“…4b. According to the spectra, the WF of freshly prepared L-Bi 2 Se 3 sample was $4.4 eV, which complied well with the reported value [43]. However, after 5 days ambient storage, the WF of the sample increased to $5.0 eV.…”

Synthesis and characterization of vertically standing MoS2 nanosheets

“… 20 demonstrate that the HER activity relates closely to the edge sites of MoS 2 flakes and the basal surfaces are catalytically inert, revealing the importance of exposed edges in catalytic reactions 21 . Furthermore, It has been demonstrated that vertically growth 1D nanotubes/nanowires and 2D nanosheets with atomically thin edges can significantly improve the field emission properties 22 23 , making vertically standing 2D materials promising candidates in field emission applications 24 25 26 .…”

Template synthesis of metal tungsten nanowire bundles with high field electron emission performance

“…Notably, the turn-on field of the present W nanowires bundles (4.1 V μm -1 ) is lower than the reported values for other tungsten nanostructures, such as nanowires (5.0 V μm -1 , diameters: 10-50 nm; lengths: ~ 1 μm) 32 , nanorods (8.0 V μm -1 , diameters: 100 nm; lengths: 1-2 μm) 38 , and nanothorns (6.2 V μm -1 , diameters: 20-60 nm; lengths: < 500 nm) 39 . The field electron emission property of the W nanowires bundles are further studied using the Fowler-Nordheim (FN) theory [38][39][40] . The linear behaviour of F-N plot ( Figure 5B) confirms that the electron emission of the W nanowire array tips is proceeded by a field emission process.…”