Field emission from AlN nanorod array

Tang, Yongbing; Cong, Huai‐Ping; Zhao, Zhichao; Cheng, Hui‐Ming

doi:10.1063/1.1899763

Cited by 93 publications

(53 citation statements)

References 25 publications

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“…The boiling point of NH 3 is -33°C. Because of the low sublimation temperature of AlCl 3 and the low boiling point of NH 3 , AlN has been observed to form even at 600°C or lower via the gas-phase reaction of AlCl 3 and NH 3 : [11,12] AlCl…”

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confidence: 99%

“…For example, FE properties of various AlN nanostructures have been investigated. The turn-on fields of various 1D aluminum nitride nanostructures have been measured, such as nanowires (8.8 V lm -1 ), [3] nanocones (12 V lm -1 ), [5] nanotips (3.1-4.7 V lm -1 ), [6,7] and hierarchical comb-like structures (2.45-3.76 V lm -1 ). [8] On the other hand, reports on the luminescence properties of AlN nanostructures are scarce.…”

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confidence: 99%

“…As a result, significant effort is being devoted to reducing the tip size and increasing the density of the emitting sites by using hierarchical nanostructures. Therefore, the synthesis of AlN nanostructures, such as nanowires, [3] nanotubes, [4] nanocones, [5] nanotips, [6,7] hierarchical comb-like structures, [8] and nanobelts, [9] with controlled high-aspect-ratio shapes and sizes is an important topic worthy of exploration. The promise that one-dimensional (1D) ), [5] nanotips (3.1-4.7 V lm -1 ), [6,7] and hierarchical comb-like structures (2.45-3.76 V lm -1…”

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Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

et al. 2006

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Aluminum nitride, an important member of the group III nitrides with the highest bandgap of about 6.2 eV, has excellent thermal conductivity, good electrical resistance, low dielectric loss, high piezoelectric response, and ideal thermal expansion, matching that of silicon.[1] The interest in field-emission (FE) applications of AlN materials has grown because they exhibit a negative electron affinity.[2] Exhibiting a negative electron affinity means that electrons excited into the conduction band can be freely emitted into vacuum. In addition, high-current emission at a relatively low field is most attractive for FE applications. As a result, significant effort is being devoted to reducing the tip size and increasing the density of the emitting sites by using hierarchical nanostructures. Therefore, the synthesis of AlN nanostructures, such as nanowires, [3] nanotubes, [4] nanocones, [5] nanotips, [6,7] hierarchical comb-like structures, [8] and nanobelts, [9] with controlled high-aspect-ratio shapes and sizes is an important topic worthy of exploration. The promise that one-dimensional (1D) ), [5] nanotips (3.1-4.7 V lm -1 ), [6,7] and hierarchical comb-like structures (2.45-3.76 V lm -1).[8] On the other hand, reports on the luminescence properties of AlN nanostructures are scarce.[9] The AlN nanocones have been observed to have an emission band centered at 481 nm, referred to as a deeplevel or trap-level state.[5]In the present study, we report the growth of well-aligned AlN nanorods with hairy surfaces by a vapor-solid (VS) process. The well-aligned AlN nanorods with hairy surfaces reported here not only provide a new hierarchical nanostructure, but also serve as a promising candidate for FE emitters because of their low electron affinity and the geometry of the multiple-nanotip surfaces. Compared with previous reports on hierarchal growth of AlN nanostructures, [8,10] in this communication we report a higher density of smaller nanotips (∼ 3-15 nm) that were radially grown on the surfaces of AlN nanorods. Each nanotip may serve as an ultrasmall emitter. In addition, growing well-aligned AlN nanorods on Si substrates is amenable to current technology for the fabrication of Sibased microelectronics devices. The subsequent characterization of their cathodoluminescence (CL) reveals that these hierarchical AlN nanostructures possess an intense emission peak, further suggesting potential applications in optoelectronic nanodevices. The structure of the as-grown products has been determined by X-ray diffraction (XRD). As shown in Figure 1, all of the diffraction peaks in the XRD pattern can be identified; they correspond to a hexagonal wurtzite-structured AlN crystal with lattice constants of a = 0.3114 nm and c = 0.4986 nm, consistent with the Joint Committee Powder Diffraction Standard (JCPDS) data file . No other impurity phases were found in the XRD pattern.The morphology of the as-synthesized products has been characterized by scanning electron microscopy (SEM). As shown in Figure 2a, a typical low-magnification...

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Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

et al. 2006

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“…A number of studies on fabrication and characterization of AlN nanostructures have been reported. [1][2][3][4][5][6][7] Several promising applications such as field emitters, [8][9][10][11] hydrogen storage media, 12,13 light emitting devices, [14][15][16] and photo detectors 17 have been demonstrated. AlN nanorods also served as the barrier layer in GaN/AlN quantum dots/wire system for single photon source owing to the strong confinement of electron-hole pair as a result of its large band offset.…”

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Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects

Hsu

Lai

et al. 2012

Applied Physics Letters

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Raman scattering of individual aluminum nitride (AlN) nanowires is investigated systematically. The axial direction of single nanowire can be rapidly verified by polarized Raman scattering. The angular dependencies of E-2(high) mode show strongly anisotropic behavior in smaller nanowires, which results from optical antenna effect. Raman enhancement (RE) per unit volume of E-2(high) increases with decreasing diameter of nanowires. Compared to the thin film, similar to 200-fold increase of RE is observed in AlN nanowires having diameter less than 50 nm, which is far beyond the quantum confinement regime. Such a large RE can be attributed to the effects of resonant cavity and stimulated Raman scattering.

Funding Agencies|Ministry of Education||National Science Council||Academia Sinica in Taiwan||US AFOSR-AOARD||

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“…It is well known that structures at the nanometer scale exhibit peculiar effects that make them interesting candidates for future quantum information technology [1], UV [2] and field emitters [3] or chemical [4] [5] and temperature sensors. The fabrication of quantum gates and qubit manipulation is an essential part for such technology.…”

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Ab-initioinvestigation of point-like defects in AlN nanowires

Nicolaev

Mitran

Nemneş

et al. 2012

J. Phys.: Conf. Ser.

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Abstract. We have studied the relaxed atomic configurations and formation energies of intrinsic and some extrinsic point-like defects in atomic-sized würtzite AlN wires, by means of density-functional calculations, using local basis sets. The results indicate that the most likely native defects in small AlN nanowires are interstitial N atoms, while in the case of doping with Si, the impurity is most likely to substitute an Al atom.

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Field emission from AlN nanorod array

Cited by 93 publications

References 25 publications

Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

Aligned AlN Nanorods with Multi‐tipped Surfaces—Growth, Field‐Emission, and Cathodoluminescence Properties

Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects

Ab-initioinvestigation of point-like defects in AlN nanowires

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