Field emission from carbon nanotubes in air

Zou, Qin; Wang, M. Z.; Li, Y. G.; Zou, Liang‐Hua; Zhao, Yuanchun

doi:10.1080/10519990903283500

Cited by 4 publications

(2 citation statements)

References 24 publications

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“…The 818 nm peak is bulk GaAs band edge free‐exciton (FE) peak, and the 828 nm is free‐exciton to carbon‐acceptor (FE‐A). The broad peaks at ≈1550 and 1910 nm are assigned to those from Ga‐antisite (Ga As ) and EL2 defects …”

Section: Resultsmentioning

confidence: 99%

Below‐Bandgap Photoluminescence from GaAs

Roca

Fukui

Mizuno

et al. 2019

Physica Status Solidi (b)

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The below-bandgap photoluminescence (PL) from semi-insulating (s.i.) GaAs is investigated. It is found that various electronic states that give rise to nearinfrared (NIR) PL peaks are generated through processes that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. Moreover, the PL signals from these states overlap with those from InAs quantum dots, wetting layers, and InGaAs structures, complicating the design of devices for telecommunications or intermediate band solar cells. The spatial positions of the various defects are also investigated by below-gap excitation and back-illuminated PL measurements. The possible identities of the defects are also presented. The present results provide guidelines for distinguishing the desired electronic states from thermal treatment-induced defect states.

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Section: Resultsmentioning

confidence: 99%

Below‐Bandgap Photoluminescence from GaAs

Roca

Fukui

Mizuno

et al. 2019

Physica Status Solidi (b)

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“…This is due to the difference between vacuum and atmospheric pressure. In atmospheric pressure, measurable field emission threshold becomes much higher than that in vacuum 35 , 36 . It may be because the electron transport between two metals can be affected by collision with molecules in the air 36 .…”

Section: Introductionmentioning

confidence: 95%

Terahertz-driven polymerization of resists in nanoantennas

Park

Lee

Kang

et al. 2018

Sci Rep

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Plasmon-mediated polymerization has been intensively studied for various applications including nanolithography, near-field mapping, and selective functionalization. However, these studies have been limited from the near-infrared to the ultraviolet regime. Here, we report a resist polymerization using intense terahertz pulses and various nanoantennas. The resist is polymerized near the nanoantennas, where giant field enhancement occurs. We experimentally show that the physical origin of the cross-linking is a terahertz electron emission from the nanoantenna, rather than multiphoton absorption. Our work extends nano-photochemistry into the terahertz frequencies.

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Field emission current from a junction field-effect transistor

Monshipouri

Abdi

2015

J Nanopart Res

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Field emission from carbon nanotubes in air

Cited by 4 publications

References 24 publications

Below‐Bandgap Photoluminescence from GaAs

Below‐Bandgap Photoluminescence from GaAs

Terahertz-driven polymerization of resists in nanoantennas

Field emission current from a junction field-effect transistor

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