Field emission in an array of homogeneous identical nanometer-long nanotubes

Sadykov, N. R.; Khrabrov, R. S.; Pilipenko, I. A.

doi:10.1140/epjd/s10053-022-00582-5

Cited by 2 publications

(1 citation statement)

References 52 publications

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“…The problem of field emission based on a homogeneous array of nanometer-long carbon nanotubes was addressed theoretically in Ref. [36]. The length of these nanotubes differs from several nanometers to several hundreds of nanometers.…”

Section: Nanostructured Materialsmentioning

confidence: 99%

Topical issue “Dynamics of systems on the nanoscale (2021)”

et al. 2023

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Exploration of the structure formation and dynamics of animate and inanimate matter on the nanometer scale is a highly interdisciplinary field of rapidly emerging research. It is relevant for various molecular and nanoscale systems of different origins and compositions and concerns numerous phenomena originating from physics, chemistry, biology, and materials science. This topical issue presents a collection of research papers devoted to different aspects of the Dynamics of Systems on the Nanoscale. Some of the contributions discuss specific applications of the research results in several modern and emerging technologies, such as controlled nanofabrication with charged particle beams or the design and practical realization of novel gamma-ray crystal-based light sources. Most works presented in this Topical Issue were reported at the joint Sixth International Conference "Dynamics of Systems on the Nanoscale" and the tenth International Symposium "Atomic Cluster Collisions" (DySoN-ISACC 2021), which were held

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Section: Nanostructured Materialsmentioning

confidence: 99%

Topical issue “Dynamics of systems on the nanoscale (2021)”

et al. 2023

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Control mechanism of the back insulated-gate in vacuum nano-electronics

Bian,

Chen,

Liang

et al. 2024

Journal of Vacuum Science &Amp; Technology B

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Recently, with the advancement of micronanoscale manufacturing technologies, vacuum electronic devices, which are immune to harsh environments (e.g., high temperatures, severe radiation), have once again entered researchers’ horizons. There have been a lot of reports focused on the impacts of emitter materials and overall consideration of structures on device performances. However, there is less discussion on the influence of the gate with different configuration geometries, even which is an extremely important component in the designed device structure, playing a switching role. In this paper, we discuss the effects of the back insulated-gate structure with different configuration geometries on emission and collection currents. The results show that the emitter emits more electrons when the gate width is larger (i.e., the coupling effect between the gate and the emitter is better), which, in turn, is able to help the collector receive more electrons. The gate has a greater influence than the collector on the local electric field near the emitter, explaining that the gate plays a switching role in such vacuum channel transistors. Moreover, we find that increased gate voltage causes the emitted electron beam to be more dispersed. Different collector voltages lead to different trends in the collection efficiency curve. The effects of widths (in the direction perpendicular to current flow) of the collector and the emitter on the emission and collection currents are also discussed. These studies provide theoretical bases for the future device designing.

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Field emission in an array of homogeneous identical nanometer-long nanotubes

Cited by 2 publications

References 52 publications

Topical issue “Dynamics of systems on the nanoscale (2021)”

Topical issue “Dynamics of systems on the nanoscale (2021)”

Control mechanism of the back insulated-gate in vacuum nano-electronics

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