2016
DOI: 10.1063/1.4961312
|View full text |Cite
|
Sign up to set email alerts
|

Field emission properties and strong localization effect in conduction mechanism of nanostructured perovskite LaNiO3

Abstract: We report the potential field emission of highly conducting metallic perovskite lanthanum nickelate (LaNiO3) from the nanostructured pyramidal and whisker shaped tips as electron emitters. Nano particles of lanthanum nickelate (LNO) were prepared by sol-gel route. Structural and morphological studies have been carried out. Field emission of LNO exhibited high emission current density, J = 3.37 mA/cm2 at a low threshold electric field, Eth = 16.91 V/μm, obeying Fowler–Nordheim tunneling. The DC electrical resis… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
9
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 14 publications
(9 citation statements)
references
References 32 publications
0
9
0
Order By: Relevance
“…For this purpose, the work function of this material was tested using a UPS equipment, and the Fermi energy level, E F = 3.88 eV, was estimated using a linear extrapolation method, as shown in Figure a . Meanwhile, the valence-band maximum was calculated as 4.95 eV from the UPS spectrum, consistent with the reference value in the classical literature. Moreover, the energy band gap of LNO film can be obtained from the absorption spectra based on h ν–( Ah ν) x characteristic curves, as shown in Figure b . Here, A , h , and ν are the absorption coefficient, Planck constant, and frequency, respectively.…”
Section: Resultsmentioning
confidence: 79%
“…For this purpose, the work function of this material was tested using a UPS equipment, and the Fermi energy level, E F = 3.88 eV, was estimated using a linear extrapolation method, as shown in Figure a . Meanwhile, the valence-band maximum was calculated as 4.95 eV from the UPS spectrum, consistent with the reference value in the classical literature. Moreover, the energy band gap of LNO film can be obtained from the absorption spectra based on h ν–( Ah ν) x characteristic curves, as shown in Figure b . Here, A , h , and ν are the absorption coefficient, Planck constant, and frequency, respectively.…”
Section: Resultsmentioning
confidence: 79%
“…However, it does not appear for pure LNO. According to earlier reports, the resistivity upturn for LNO thin film is caused due to the weak localization [33] whereas for polycrystalline film [34] or nanostructured LNO [35], the Anderson localization dominates at the grain boundaries. Therefore the absence of upturn in pure LNO indicates the negligible effect of disorder induced localization on the electron conduction.…”
Section: Introductionmentioning
confidence: 99%
“…The F–N plots which are mainly used to calculate the field enhancement factor (β) from the slopes can be represented by ignoring the correction factor λ M and ϑ F The field enhancement factor (β) can be measured by Figure b represents the corresponding F–N plots of both samples. The nonlinear characteristics in the mid- and low-frequency regions are a clear consequence of the semiconducting nature of field-emitting materials due to the presence of surface states and an innately definite number of charge carriers in the conduction band.…”
Section: Experimental Results and Discussionmentioning
confidence: 99%