Field emission properties of carbon nanotubes grown on silicon nanowire arrays

Broadband Terahertz Source Based on Photomixing in Laser-Assisted Field Emission with Clusters of Carbon Nanotubes

“…The tungsten emitter is mounted on a filament so it was cleaned by electrical heating before each measurement. It is not possible to clean the CNT, which is probaby the cause for the "switch-on" effect in which the supply voltage must be momentarily increased beyond the operating point to initiate field emission with the CNT (Liu & Fan, 2005). Figure 5 is a Fowler-Nordheim Plot of the data for tube C-6, showing that a straight line is an excellent fit of the data which is consistent with Eq.…”

Improved field emission properties from carbon nanotubes grown onto micron-sized arrayed silicon pillars with pyramidal bases

“…Since uneven substrates which CNTs are grown on can reduce electric-field-screening effect, the combination of rugged substrates and CNTs improves the emission performance of CNTs effectively. Recently, in order to mitigate the electric-field-screening effect, several research groups have designed patterned and aligned CNTs [15], CNT growth on copper nanowire [16], silicon (Si) nanowire [17] and Si nanoporous pillar arrays [18].…”

Fabrication and field emission properties of multi-walled carbon nanotube/silicon nanowire array

“…Especially, thin-walled FeNifilled CNTs showed much lower turn-on field of 0.30 V/mm (at 10 mA/cm 2 ) [14]. It was reported that the combination of SiNWs and carbon nanotubes could effectively improve the emission performance [15][16][17][18]. Multi-walled carbon nanotubes (MWCNTs) were introduced to the SiNWs, and the turn-on field of the structure was reduced to 2.3 V/mm [15].…”

“…It was reported that the combination of SiNWs and carbon nanotubes could effectively improve the emission performance [15][16][17][18]. Multi-walled carbon nanotubes (MWCNTs) were introduced to the SiNWs, and the turn-on field of the structure was reduced to 2.3 V/mm [15]. MWCNTs were also grown on the silicon nanoporous pillar array, and the turn-on field is 0.56 V/mm [18].…”