1986
DOI: 10.1103/physrevb.34.8967
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Field-enhanced electronic transport in solids

Abstract: Electronic transport in the presence of trapping centers is considered by taking into account the local electric field contribution. A generalization of the previous models of field-assisted thermal ionization is proposed. The origin of the local electric field is discussed and a theoretical evaluation based on the electron-phonon interaction is given in agreement with the experimental results obtained in some differently doped CdF2 crystals and in SiO films.

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Cited by 17 publications
(11 citation statements)
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“…The existence of internal fields of order of magnitude 10 4 -10 5 V cm 1 has been previously suggested to explain the broadening of optical and spin resonance lines [1] in insulators. Subsequent work on Poole-Frenkel systems indicated the need to account for such fields in order to arrive at a consistent explanation of transport data; the obtained values of the fields agreed with those obtained by optical means [2]. Later on, a theoretical argument based on a diffusion equation was advanced [3] indicating the need for the introduction of an internal field in transport processes.…”
mentioning
confidence: 57%
See 1 more Smart Citation
“…The existence of internal fields of order of magnitude 10 4 -10 5 V cm 1 has been previously suggested to explain the broadening of optical and spin resonance lines [1] in insulators. Subsequent work on Poole-Frenkel systems indicated the need to account for such fields in order to arrive at a consistent explanation of transport data; the obtained values of the fields agreed with those obtained by optical means [2]. Later on, a theoretical argument based on a diffusion equation was advanced [3] indicating the need for the introduction of an internal field in transport processes.…”
mentioning
confidence: 57%
“…Around coulombic centres, such a field superimposes upon the Coulomb field producing a barrier at zero applied external field, and hence in the ohmic region, which the carriers can overcome either assisted by the temperature or by tunnelling at low temperatures. It allowed an explanation of deviations from the classical Poole-Frenkel characteristics, especially at low fields [2].…”
mentioning
confidence: 99%
“…Effect of Local Fields The classical Frenkel-Poole model yields an ionization value which is often too large when compared to experimental data. At sufficient density, Coulomb-attractive centers will interact with each other due to their local field F loc , which needs to be added to the external field F (Dallacasa and Paracchini 1986). The ionization probability consequently is given as…”
Section: Frenkel-poole Ionizationmentioning
confidence: 99%
“…(1) the original Frenkel-Poole model, (2) Dallacasa and Paracchini (1986) for γ = 1 (=abscissa value with F replaced by F loc ), (3) the Hartke (1968) model, (4) the Hill (1971) and Connell et al (1972) model for emission in field direction, (5) the Pai (1975) model; and (6) the Hill (1971) model for isotropic emission, (7) the Dallacasa and Paracchini (1986) model plotted for γ = 10. After Dallacasa and Paracchini (1986)…”
Section: Impact Ionization Across the Bandgapmentioning
confidence: 99%
“…The formula is also unsuitable for dealing with low-temperature hopping and tunnelling for which alternative treatments based on equivalent resistor-capacitor network models (Miller andAbrahams 1960, van Staveren, Brom andde Jongh 1991) or percolation analysis (Ambegaokar, Halperin and Langer 1971) for instance in the case of variable-range hopping (Mott 1969), have been proposed. Also, the relevant case of transport at high fields in semiconductors and insulators cannot be appropriately studied within the adiabatic response and a number of analytic approaches based on isothermal ideas have been developed (Hill 1971, Dallacasa and Paracchini 1986).…”
mentioning
confidence: 99%