Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules

Jeong, Jaeseong; Hong, Soon-Ha; Park, Sang-Deuk

doi:10.1016/j.microrel.2007.07.087

Cited by 10 publications

(5 citation statements)

References 6 publications

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“…This variation in degradation behavior makes accurate prognostics for maintenance or replacement extremely difficult. However, some of this variation may be partially explained by Jeong et al [96], who showed that IGBTs can be subject to electrostatic discharge (ESD) on the manufacturing line during heat sink and inverter assembly. This ESD adds a resistive element that can lower the thyristor turn-on threshold and increase gate leakage current of affected devices.…”

Section: Electrical Failurementioning

confidence: 99%

Insulated gate bipolar transistor reliability testing protocol for PV inverter applications

Flicker

Kaplar

Yang

et al. 2013

Progress in Photovoltaics

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To decrease the cost of ownership of photovoltaic systems, less costly and more reliable photovoltaic inverters must be developed. Insulated gate bipolar transistors are a significant cause of inverter failures and system inefficiencies, so a thorough understanding of their strengths and weaknesses with regards to inverters is necessary. This paper summarizes the current state of experimentation surrounding the use of IGBTs in photovoltaic inverters and discusses their construction, use, lifetime, and reliability of IGBTs regularly used in photovoltaic inverters. Published 2013. This article is a U.S. Government work and is in the public domain in the USA.

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Section: Electrical Failurementioning

confidence: 99%

Insulated gate bipolar transistor reliability testing protocol for PV inverter applications

Flicker

Kaplar

Yang

et al. 2013

Progress in Photovoltaics

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“…Potentially, Buck-Boost DC-DC transformerless converters can face short-circuit failure modes under certain conditions. Sources [21][22][23][24][25][26] offer significant information in this direction as follows: IGBT structural behavior under short-circuit [21]; breakdown and thermal runaway mechanisms leading to destructive failure [22]; damages from electrostatic discharge [23]; IGBTs' mechanical stress under short-circuit conditions [24]; turn-off failure mechanism [25]; robustness of IGBT modules during turn-off commutation.…”

Section: Introductionmentioning

confidence: 99%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

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“…Dominant failure mechanisms include fatigue, latch-up, electrostatic discharge (ESD), radiation-induced effect, and ceramic substrate fracture (Oh, Han, McCluskey, Han, & Youn, 2015). Fatigue failure can occur due to the thermal cycling (Celnikier, Benabou, Dupont, & Coquery, 2011), while latchup can happen due to mishandling of the devices (Jeong, Hong, & Park, 2007). From maintenance histories in the field, electrical overloads that exceed the maximum rating of IGBTs for very short duration were reported to be most predominant (Lee, Oh, Park, Youn, Kim, Kim, & Cho, 2016).…”

Section: Introductionmentioning

confidence: 99%

Failure Precursor Identification and Degradation Modeling for Insulated Gate Bipolar Transistors Subjected to Electrical Stress

Lee

Park

et al. 2016

PHM_CONF

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In driving equipment of smart factories, unexpected failures of insulated gate bipolar transistors (IGBTs) are often observed. Electrical stresses are one of the dominant causes for the IGBT failures in the field. However, there is little study about the effect of electrical stresses on the degradation of IGBTs. In this paper, we attempt to identify a key failure precursor for IGBTs subjected to electrical stresses and to model the evolution of the failure precursor. To achieve the goals, first, the main causes of IGBT failures are identified based on maintenance history, filed failure data, and experts’ opinions. Second, an artificial fault injection method, i.e., electrostatic discharge (ESD), is employed to produce partially degraded (but not failed) IGBTs. The proper levels of the intensity of electrical loads (i.e., magnitude and number of the ESDs) are also determined. Finally, artificial ESD faults are seeded to IGBTs and potential candidates of failure precursors are measured. The steps are repeated until the failure of the IGBTs is observed. A relevant failure precursor is determined based on the results. A degradation model for the precursor is then built. It is expected that the key failure precursor determined in this study and the proposed degradation model can help avoid unexpected failure of IGBTs in driving equipment of smart factories.

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Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules

Cited by 10 publications

References 6 publications

Insulated gate bipolar transistor reliability testing protocol for PV inverter applications

Insulated gate bipolar transistor reliability testing protocol for PV inverter applications

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

Failure Precursor Identification and Degradation Modeling for Insulated Gate Bipolar Transistors Subjected to Electrical Stress

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