2024
DOI: 10.1063/5.0226135
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Field-free spin–orbit torque devices for logic and neural network applications

Chun-Yi Lin,
Jui-Yu Hsieh,
Po-Chuan Wang
et al.

Abstract: Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved with a threshold switching current density of 5.4 × 1010 A/m2. By exploiting the advantage of separated read–write paths, we demonstrate fundamental logic operations such as AND, OR, and NOT in a dual-channel SOT Hall bar device. We further explore the application… Show more

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