Field-Free Switching of Perpendicular Magnetization through Voltage-Gated Spin-Orbit Torque

Peng, Shouzhong; Lu, Jiaqi; Li, W. X.; Wang, L. Z.; Zhang, H.; Li, X.; Wang, K. L.; Zhao, Weisheng

doi:10.1109/iedm19573.2019.8993513

Cited by 44 publications

(11 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Field-free magnetization in the FM/AFM exchange-biased system is also demonstrated by Oh et al and Zhao et al in CoFeB/IrMn structures. However, magnetization switching loops with incomplete switching are observed [58][59][60][61]. The partial magnetization switching is not desirable and can result in critical issues in the application.…”

Section: Field-free Switching By Exchange-bias and Interlayer Exchang...mentioning

confidence: 99%

Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet

Zhang

Cui

et al. 2022

Mater. Futures

View full text Add to dashboard Cite

All-electrical driven magnetization switching attracts much attention in next-generation spintronic memory and logic devices, particularly in magnetic random-access memory (MRAM) based on the spin-orbit torque (SOT), i.e., SOT-MRAM, due to its advantages of low power consumption, fast write/read speed, and improved endurance, etc. For conventional SOT-driven switching of the magnet with perpendicular magnetic anisotropy (PMA), an external assisted magnetic field is needed to break the inversion symmetry of the magnet, which not only induces the additional power consumption but also makes the circuit more complicated. Over the last decade, significant effort has been devoted to field-free magnetization manipulation by using SOT. In this review, we introduce the basic concepts of SOT. After that, we mainly focus on several approaches to realize the field-free deterministic SOT switching of the perpendicular magnet. The mechanisms mainly include mirror symmetry breaking, chiral symmetry breaking, exchange bias, and interlayer exchange coupling. Furthermore, we show the recent progress on the study of SOT with unconventional origin and symmetry. The final section is devoted to the industrial-level approach for potential applications of field-free SOT switching in SOT-MRAM technology.

show abstract

Section: Field-free Switching By Exchange-bias and Interlayer Exchang...mentioning

confidence: 99%

Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet

Zhang

Cui

et al. 2022

Mater. Futures

View full text Add to dashboard Cite

show abstract

“…Ref. [105] proposed a combination of SOT and VCMA switching with exchange bias; this ultralow power-switching method required a gate voltage of only 0.6 V. Based on these energy-efficient MTJ switching mechanisms, the design space of high-level in-MRAM computing can be explored using the SPICE behavioral model. Another potential solution for high-performance IMC is offered by the joint effect of STT-and SOT-induced switching, which provides high energy efficiency and speed [106,107].…”

Section: Energy Efficiency Challengementioning

confidence: 99%

A survey of in-spin transfer torque MRAM computing

Cai

Liu

Chen

et al. 2021

Sci. China Inf. Sci.

View full text Add to dashboard Cite

In traditional von Neumann computing architectures, the essential transfer of data between the processor and memory hierarchies limits the computational efficiency of next-generation system-on-a-chip. The emerging in-memory computing (IMC) approach addresses this issue and facilitates the movement of significant data and rapid computations. Among the different memory types, intrinsic energy efficiency is demonstrated by in-magnetic random access memory (MRAM) computing with a low-power spintronic magnetic tunnel junction device and hybrid integration at an advanced complementary metal-oxide semiconductor node. This study reviews state-of-the-art techniques for managing IMC with an emphasis on spin-transfer torque-MRAM computing via design schemes at the bit-cell, circuit, and system levels. In addition, this study presents effective design techniques and potential challenges and demonstrates the existing limitations of in-MRAM computing and potential methods for overcoming these issues. This study also considers the design technology co-optimization from the IMC perspective.

show abstract

“…The need for this external field is a major hurdle for practical MRAM products. Many solutions for field-free switching of PMA-based SOT-MRAM have been developed to circumvent this issue, through MTJ stack optimizations [93]- [96]. However, these add process complexities to the fabrication process, and large scale demonstrations of SOT-MRAMs is still an active area of research.…”

Section: Spin-orbit Torque Mram (Sot-mram)mentioning

confidence: 99%

Magnetoresistive Circuits and Systems: Embedded Non-Volatile Memory to Crossbar Arrays

Agrawal

Wang

Sharma

et al. 2021

IEEE Trans. Circuits Syst. I

View full text Add to dashboard Cite

This overview article describes Magnetoresistive Random Access Memory (MRAM) from a circuits and systems perspective. We discuss various tradeoffs and design challenges of MRAM in three broad application areas: 1) embedded nonvolatile memory (eNVMs), 2) crossbar-based analog in-memory computing, and 3) stochastic computing. Certain MRAM characteristics, such as high retention, high endurance and fast read and write operations, make them ideal for replacing the standard CMOS memories for last-level cache applications with future scaling. However, various tradeoffs in power, performance and area pose conflicting requirements on MRAM design. We explore these challenges and various circuit techniques that have been developed to mitigate them. Further, we present various requirements of memristive crossbar arrays for accelerating matrixvector-multiplication (MVM) operations in light of MRAM devices, and highlight various challenges, design considerations, and applicability of MRAM as crossbar arrays. Finally, we will elaborate on how inherent stochasticity of MRAM devices can be leveraged for implementing energy-efficient true random number generators (TRNGs) and stochastic units for performing certain tasks, such as developing fast solvers for combinatorial optimization, and stochastic neural networks.

show abstract

Field-Free Switching of Perpendicular Magnetization through Voltage-Gated Spin-Orbit Torque

Cited by 44 publications

References 10 publications

Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet

Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet

A survey of in-spin transfer torque MRAM computing

Magnetoresistive Circuits and Systems: Embedded Non-Volatile Memory to Crossbar Arrays

Contact Info

Product

Resources

About