Field-free switching through bulk spin — orbit torque in L10-FePt films deposited on vicinal substrates

Luo, Yansheng; Zhuang, Yanshan; Feng, Zhongshu; Fan, Haodong; Wu, Birui; Jing, Menghao; Shao, Ziji; Li, Hai; Bai, Ru; Wu, Y. Z.; Wang, Ningning; Zhou, Tiejun

doi:10.1007/s11467-022-1197-7

Cited by 7 publications

(6 citation statements)

References 32 publications

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“…Thus, our results demonstrate that the vicinal substrate could not only induce eld-free switching, but also increase the SOT e ciency. The tuning of the bulk SOT by vicinal substrate have also been observed in the L1 0 -FePt system 27 . This could be contributed to the strain effects, the strain induced by the additional atomic steps would change crystal symmetry and the modify the spin-orbit coupling, and orbital polarization 38 .…”

Section: Quantitative Evaluation Of the Sot Effective Eldmentioning

confidence: 67%

“…The above discussion demonstrates that tilted anisotropy is the origin of the eld-free switching, while DMI could help decreasing the critical switching current. Previous results also have shown that vicinal substrate could tilt the anisotropy of L1 0 -FePt, and induce the eld-free switching 27,35 .…”

Section: Simulation Of the Eld-free Switchingmentioning

confidence: 72%

“…Quantitative Veri cation of the tilted anisotropy and DMI Next, we explore the physical origin of the eld-free switching. According to previous results, both the tilted magnetic anisotropy 27 and Dzyaloshinskii-Moriya interaction (DMI) would play a critical role in the SOT the switching 17,28 . For this reason, we quantitatively characterize these quantities.…”

Section: Structural and Magnetic Propertiesmentioning

confidence: 79%

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Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Che

Luo

Liang

et al. 2023

Preprint

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A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the CoPt single layer has attracts a lot of interests, as it could simplifies the structure and add new flexibility in the design of SOT devices, compared with the Ferromagnet/Heavy metal bilayer counterparts. Unfortunately, under the field-free switching strategies used nowadays, the switching of the CoPt layer is often partial, which sets a major obstacle for the practical applications. In this study, by growing the CoPt on vicinal substrates, we could achieve the full-scale (100% switching ratio) field-free switching of the CoPt layer. We demonstrate that when grown on vicinal substrates, the magnetic easy axis of the CoPt could be tilted from the normal direction of the film plane; the strength of Dzyaloshinskii–Moriya interaction (DMI) would be also be tuned as well. Micromagnetic simulation further reveal that the field-free switching stems from tilted magnetic anisotropy induced by the vicinal substrate, while the enhancement of DMI help reducing the critical switching current. In addition, we also found that the vicinal substrates could also enhance the SOT efficiency. With such simplestructure, full-scale switching, tunable DMI and SOT efficiency, our results provide a new knob for the design SOT-MRAM and future spintronic devices.

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Section: Quantitative Evaluation Of the Sot Effective Eldmentioning

confidence: 67%

Section: Simulation Of the Eld-free Switchingmentioning

confidence: 72%

Section: Structural and Magnetic Propertiesmentioning

confidence: 79%

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Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Che

Luo

Liang

et al. 2023

Preprint

Self Cite

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“…This observation confirms that the origin of field-free switching stems from the tilted magnetic anisotropy of TmIG grown on a vicinal substrate, which aligns with previous reports. 34,36,44) In summary, we have achieved field-free switching of TmIG films by growing TmIG films on a vicinal substrate. Importantly, TmIG films grown on the vicinal substrate maintains good PMA characteristics.…”

mentioning

confidence: 93%

“…[32][33][34][35] Notably, Luo et al have documented the field-free switching of single L1 0 -FePt film on vicinal MgO (001) substrates without adding other functional layers or creating asymmetry in the film structure. 36) Li et al reported field-free perpendicular magnetization switching in a CoPt single layer with tilted PMA deposited on the Si/SiO 2 substrate. 37) Hu et al investigated field-free SOT switching in Pt/Co/Pt magnetic heterostructures with a Pt underlayer prepared by oblique angle deposition.…”

mentioning

confidence: 99%

Field-free magnetization switching with full scale in Pt/Tm₃Fe₅O₁₂ bilayer on vicinal substrate

Li,

Luo,

et al. 2024

Appl. Phys. Express

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The spin-orbit torques (SOTs) within Pt/Tm3Fe5O12 (TmIG) bilayer offer an expedient method for manipulating the magnetization of TmIG. However, the practical application of TmIG is hindered by the presence of external field during switching. Here, we demonstrate field-free magnetization switching in Pt/TmIG bilayer on vicinal substrate with minimal sacrifice to perpendicular magnetic anisotropy (PMA) of TmIG. With the assistance of tilt PMA, reversible perpendicular magnetization switching is realized in the absence of an external field. Our results offer an alternative solution for achieving field-free perpendicular magnetization switching in Pt/TmIG bilayer, thereby fostering the advancement of emerging SOT-based devices.

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Full-Scale Field-Free Magnetization Switching in Y₃Fe₅O₁₂/Pt Nanostructures for Spin–Orbit Torque Applications

Bai,

Li,

Deng

et al. 2024

ACS Appl. Nano Mater.

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Field-free switching through bulk spin — orbit torque in L10-FePt films deposited on vicinal substrates

Cited by 7 publications

References 32 publications

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Field-free magnetization switching with full scale in Pt/Tm₃Fe₅O₁₂ bilayer on vicinal substrate

Full-Scale Field-Free Magnetization Switching in Y₃Fe₅O₁₂/Pt Nanostructures for Spin–Orbit Torque Applications

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Field-free switching through bulk spin — orbit torque in L10-FePt films deposited on vicinal substrates

Cited by 7 publications

References 32 publications

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Field-free magnetization switching with full scale in Pt/Tm3Fe5O12 bilayer on vicinal substrate

Full-Scale Field-Free Magnetization Switching in Y3Fe5O12/Pt Nanostructures for Spin–Orbit Torque Applications

Contact Info

Product

Resources

About

Field-free magnetization switching with full scale in Pt/Tm₃Fe₅O₁₂ bilayer on vicinal substrate

Full-Scale Field-Free Magnetization Switching in Y₃Fe₅O₁₂/Pt Nanostructures for Spin–Orbit Torque Applications