Field-induced quantum Hall ferromagnetism in suspended bilayer graphene

Elferen, H. J. van; Veligura, A.; Kurganova, E. V.; Zeitler, U.; Maan, J.C.; Tombros, N.; Vera‐Marun, Ivan J.; Wees, van Bart

doi:10.1103/physrevb.85.115408

Cited by 27 publications

(37 citation statements)

References 38 publications

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“…However, we attribute the observed plateaus to the filling factors 2 and 1. As we noticed before, 8,24 most of the time the current annealing procedure leads to the formation of high-quality annealed regions connected in series with low-mobility p-doped regions close to the contacts. Therefore higher values of the conductance plateaus can be explained by a p-doped slope, which increases with magnetic field B.…”

Section: Temperature Dependence and Quantum Transportmentioning

confidence: 84%

“…2,3 Recent advances in obtaining suspended bilayer graphene devices with charge carrier mobility exceeding μ > 10 000 cm 2 V −1 s −1 gave access to the investigation of many-body phenomena in clean bilayer graphene at low charge carrier concentration (n < 10 10 cm −2 ). [4][5][6][7][8][9][10][11] Due to the nonvanishing density of states at the charge neutrality point (CNP), bilayer graphene is predicted to have a variety of ground states triggered by electron-electron interaction. There are two competing theories describing the ground state of BLG: a transition (i) to a gapped layer-polarized state [12][13][14][15][16][17] (excitonic instability) or (ii) to a gapless nematic phase.…”

Section: Introductionmentioning

confidence: 99%

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Transport gap in suspended bilayer graphene at zero magnetic field

et al. 2012

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We report a change of three orders of magnitude in the resistance of a suspended bilayer graphene flake which varies from a few k in the high-carrier-density regime to several M around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of quantum Hall plateaus appearing at filling factor ν = 2 followed by ν = 1 suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic fields indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both the transport gap and B field response point toward the spin-polarized layer-antiferromagnetic state as the ground state in the bilayer graphene sample. The observed nontrivial dependence of the gap value on the normal component of B suggests possible exchange mechanisms in the system.

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Section: Temperature Dependence and Quantum Transportmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Transport gap in suspended bilayer graphene at zero magnetic field

et al. 2012

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“…Interaction effects are expected to lift the level degeneracy of quantum Hall ferromagnet states at integer filling factors [326][327][328][329][330][331]. Indeed, an insulating state at filling factor ν = 0 and complete splitting of the eightfold-degenerate level at zero energy have been observed with quantum states at filling factors ν = 0, 1, 2 and 3 in high-mobility suspended bilayer graphene at low fields (with all states resolved at B = 3 T) [161,332] and in samples on silicon substrates at high fields, typically above 20 T [333,334].…”

Section: Electronic Interactionsmentioning

confidence: 99%

The electronic properties of bilayer graphene

2013

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We review the electronic properties of bilayer graphene, beginning with a description of the tightbinding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energy. We take into account five tight-binding parameters of the Slonczewski-Weiss-McClure model of bulk graphite plus intra-and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects. CONTENTS

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“…2(a), the oscillation amplitude increases with increasing field until fully developed plateaus appear in G. We use a quantitative analysis of the amplitudes A ν similar to the determination of the Dingle temperature T D in Ref. 26. This model is based on the Lifshitz-Kosevich formula, 27 R = A ν (B,T ) sin(P /B + ϕ), with an oscillation amplitude A ν (B,T ), a period P , and a phase ϕ.…”

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confidence: 99%

Fine structure of the lowest Landau level in suspended trilayer graphene

et al. 2013

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Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quantitative analysis of distinctness of the quantum Hall plateaus as a function of field yields a hierarchy of the filling factors: \nu=6, 4, and 0 are the most pronounced, followed by \nu=3, and finally \nu=1, 2 and 5. Apart from the appearance of a \nu=4 state, which is probably caused by a layer asymmetry, this sequence is in agreement with Hund's rules for ABC-stacked trilayer graphene

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Field-induced quantum Hall ferromagnetism in suspended bilayer graphene

Cited by 27 publications

References 38 publications

Transport gap in suspended bilayer graphene at zero magnetic field

Transport gap in suspended bilayer graphene at zero magnetic field

The electronic properties of bilayer graphene

Fine structure of the lowest Landau level in suspended trilayer graphene

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