Field-inhomogeneity-induced lineshape rotation observed in room-temperature electroreflectance spectra of GaAs

Behn, U.; Röppischer, H.

doi:10.1088/0022-3719/21/32/006

Cited by 27 publications

(4 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…however, that it is solely a consequence of surface field inhomogeneity [32][33][34]. This is because the exciton Rydberg energy G estimated from the present ER data is much larger than that obtained from a linear interpolation between the end-binary values (G ∼ 9 meV for Ga 0.5 In 0.5 P,).…”

Section: Standard Critical-point Analysiscontrasting

confidence: 60%

Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy

Noguchi¹,

Ozaki²,

Adachi³

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Electroreflectance (ER) measurements have been carried out to investigate critical point (CP) structures in weakly ordered Ga 0.5 In 0.5 P alloy at temperatures between 11 and 300 K. The measured ER spectra reveal distinct structures at ∼1.9-2.0 eVThese structures are well explained by a three-dimensional [E 0 /(E 0 + 0 )] and a two-dimensional one-electron CP line shape [E 1 /(E 1 + 1 ) and E 2 /(E 2 + δ)]. The temperature dependence of the CP parameters (energy, amplitude and broadening parameter) has been determined and analysed using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The spin-orbit split off energies have also been determined to be 0 ∼ 80 meV and 1 ∼ 256 meV, which are almost temperature independent.

show abstract

Section: Standard Critical-point Analysiscontrasting

confidence: 60%

Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy

Noguchi¹,

Ozaki²,

Adachi³

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Additionally, when the inhomogeneity of the electric field, such as in the space charge region, is taken into account, both excitonic and band-to-band transition may contribute to the PR spectral line shape. 16,17) Although we still have no evidence for the presence of electric field inhomogeneity in our sample, we attempt fitting as a limited method for comparison with the results of the PPT method.…”

Section: Resultsmentioning

confidence: 99%

Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements

Kashima

Fukuyama

Sakai

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The exciton binding energies (E xb) of a dilute nitride Ga1-y In y N0.012As0.988 layer (y = 0.0 to 4.5%) with the thickness of 100 nm were determined by both piezoelectric photothermal (PPT) and photoreflectance (PR) spectroscopies. Curve-fitting analyses were carried out using a three-dimensional direct allowed-transition model with the Voigt function as a convolution integral for PPT and with Aspnes' formula for PR. The observed estimation error for PR was about two times larger than that of PPT. Therefore, we conclude that PPT is a novel methodology for determining E xb when it is small and two expected critical energies exist in the narrow energy region.

show abstract

“…2 for different temperatures as indicated. 5. 2͑a͒ exhibit Franz-Keldysh oscillations for energies above the gap.…”

Section: Photoreflectance and Photoreflectance Excitation Spectramentioning

confidence: 98%

Relation between photoreflectance excitation and absorption spectra for GaAs and GaN films

Behn

Brandt

Grahn

2003

Journal of Applied Physics

View full text Add to dashboard Cite

Photoreflectance excitation ͑PRE͒ spectroscopy is shown to be a suitable method to investigate semiconductor materials in the near-infrared to near-ultraviolet spectral range. The investigation of a GaAs and a GaN bulk film demonstrates the applicability of this method even up to room temperature. For both materials, the line shape analysis suggest a nonlinear relation between the PRE and the absorption line shapes, leading to a reduction of the excitonic peak height in the PRE spectra compared to the absorption spectra. To keep this reduction as small as possible, the pump power should be on the order of the probe power or smaller.

show abstract

Field-inhomogeneity-induced lineshape rotation observed in room-temperature electroreflectance spectra of GaAs

Cited by 27 publications

References 17 publications

Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy

Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy

Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements

Relation between photoreflectance excitation and absorption spectra for GaAs and GaN films

Contact Info

Product

Resources

About

Field-inhomogeneity-induced lineshape rotation observed in room-temperature electroreflectance spectra of GaAs

Cited by 27 publications

References 17 publications

Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy

Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy

Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements

Relation between photoreflectance excitation and absorption spectra for GaAs and GaN films

Contact Info

Product

Resources

About

Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy

Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy