Field mapping of focused ion beam prepared semiconductor devices by off-axis and dark field electron holography

Cooper, David; Rivallin, P.; Guégan, G.; Plantier, Christophe; Robin, Éric; Guyot, Florence; Constant, Isabelle

doi:10.1088/0268-1242/28/12/125013

Cited by 11 publications

(2 citation statements)

References 37 publications

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“…The first method explored in this work was FIB/SEM. FIB has been recognized as a successful method for morphology investigation of different kinds of materials, but has been particularly well applied for nanofabrication in the semi conductor industry 47 or preparation of ceramic samples for transmission microscopy 48 , which could not be easily cut by ultramicrotomy. More recently FIB/SEM has been increasingly used for the characterization of biological samples 49 .…”

Section: Resultsmentioning

confidence: 99%

3D Membrane Imaging and Porosity Visualization

Sundaramoorthi

Hadwiger

Ben-Romdhane

et al. 2016

Ind. Eng. Chem. Res.

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Ultrafiltration asymmetric porous membranes were imaged by two microscopy methods, which allow 3D reconstruction: Focused Ion Beam and Serial Block Face Scanning Electron Microscopy. A new algorithm was proposed to evaluate porosity and average pore size in different layers orthogonal and parallel to the membrane surface. The 3D-reconstruction enabled additionally the visualization of pore interconnectivity in different parts of the membrane. The method was demonstrated for a block copolymer porous membrane and can be extended to other membranes with application in ultrafiltration, supports for forward osmosis, etc, offering a complete view of the transport paths in the membrane.

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Section: Resultsmentioning

confidence: 99%

3D Membrane Imaging and Porosity Visualization

Sundaramoorthi

Hadwiger

Ben-Romdhane

et al. 2016

Ind. Eng. Chem. Res.

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“…4 are caused by electromagnetic noise affecting STEM scan coils. 29 The strain profile was extracted from the strain map along the film growth direction of [001] as marked by a box in Fig. 4, then the strain profile was plotted in Fig.…”

Section: Smf(n)mentioning

confidence: 99%

Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

et al. 2014

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Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi2 source and drain. Nanometer-scale SMFs were formed with a scanning grating size of ds at integer multiples of the Si crystal lattice spacing dl (ds ∼ ndl, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.

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Mapping electrostatic potentials and deformation in semiconductor devices by off‐axis electron holography and other techniques

Boureau

Cooper

Bernier

2016

European Microscopy Congress 2016: Proceedings

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Off‐axis electron holography can be used to measure the electrostatic and magnetic potentials in semiconductor devices with high‐sensitivity and nm‐scale resolution [1]. In this presentation we will show experimental results that have been obtained using combinations of electron holography, precession diffraction and differential phase contrast (DPC) on a range of different semiconductor devices. Deformation maps have been acquired using dark field electron holography on a variety of different device structures and these results have been compared to those obtained by precession electron diffraction (NPED). Figure 1 shows STEM images and results obtained by dark holography and NPED on a Si specimen containing 10‐nm‐thick SiGe layers with different Ge concentrations and also a recessed source and drain SiGe device. The deformation maps obtained by dark holography and shown here have a spatial resolution of 6 nm and a precision of 0.05 %. The maps obtained by precession electron diffraction have a spatial resolution of 2 nm and a precision of 0.02 %. In this presentation we will show the advantages and difficulties associated with the use of the different techniques [2]. We will also compare electron holography and DPC for dopant profiling on fully processed and electrically tested devices. Figure 2(a) and (b) shows STEM images that have been acquired from two different pMOS devices with different spacer widths. The spacers are used to prevent dopants from diffusing under the gate during the activation anneals. Figure 2(c) shows how the specimen is rotated to remove the top metal layers in the device, backside milling is then used to provide a high quality TEM specimen. Figures 2(d) and (e) show maps of the electrostatic potential in the devices that have been acquired using off‐axis electron holography. The spatial resolution in these maps is 5 nm and the difference in the potential distribution under the gate can be clearly seen. Potential profiles have been obtained from across the device and the parameters such as the electrical gate width can be measured. From the analysis of these real devices, the advantages and problems that are associated with electron holography and DPC can be discussed.

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Field mapping of focused ion beam prepared semiconductor devices by off-axis and dark field electron holography

Cited by 11 publications

References 37 publications

3D Membrane Imaging and Porosity Visualization

3D Membrane Imaging and Porosity Visualization

Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

Mapping electrostatic potentials and deformation in semiconductor devices by off‐axis electron holography and other techniques

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