Field-modulated low-energy electronic and optical properties of armchair silicene nanoribbons

Shyu, Feng–Lin

doi:10.1016/j.physe.2016.08.024

Cited by 12 publications

(4 citation statements)

References 29 publications

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“…8(a), one can see three absorption peaks in the solid line due to the direct interband transitions: ∆n = |n c − n v | = 0, which are valid near the Dirac points. This selection rule is the same as that in the pristine armchair graphene nanoribbon, [25,32] which quite differs from that for the ZSiNRs. In particular, the first absorption peak A 1 at hω = 0.065t 0 is the signature of the energy gap.…”

Section: Armchair Nanoribbonsmentioning

confidence: 98%

“…[23,24] Shyu investigated the optical properties of the ASiNRs modulated by a transverse electric field and those of ZSiNRs in a perpendicular magnetic field. [25,26] Here we ask such questions, how do the electric and exchange fields affect the energy bands and the edge states of the SiNRs? Could we modulate the unique edge states conveniently by controlling the external fields and identify them by the optical measurement?…”

Section: Introductionmentioning

confidence: 99%

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Distinct edge states and optical conductivities in the zigzag and armchair silicene nanoribbons under exchange and electric fields

Zou¹,

Kang²

2018

Chinese Phys. B

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Based on the tight binding model, we investigate the low energy bandstructures, edge states, and optical absorptions for the silicene nanoribbons (SiNRs) with different terminations under an in-plane exchange field and/or a perpendicular electric field. We find that the zigzag SiNRs are gapped by the exchange field, but they could reenter the metallic state after the application of the electric field. Contrarily, a certain kind of armchair SiNRs remain gapless even if a weak exchange field is present. Furthermore, the combination of the exchange and electric fields could effectively modulate the penetration length and the components of the edge states in the SiNRs. The corresponding optical conductivities for the SiNRs are also calculated, which show remarkable dependence on the edge types of the SiNRs and the two external fields.

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Section: Armchair Nanoribbonsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Distinct edge states and optical conductivities in the zigzag and armchair silicene nanoribbons under exchange and electric fields

Zou¹,

Kang²

2018

Chinese Phys. B

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“…Especially for structures with widths of 3, 4, 13, 16 atoms, the band gap width decreases rapidly to 0. The optical properties of SiNRs are also thoroughly studied [29][30][31][32][33][34][35][36]. Studies on the optical properties of armchair SiNRs have shown that all studied configurations are semiconductors with a direct band gap suitable for infrared optical applications [32].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of C, Ge-doped armchair silicene nanoribbons applied in optoelectronics

Ngoc

Thuy

2023

J. Phys.: Condens. Matter

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With the continuous development of nanotechnology, the search for new material structures plays a crucial role. Silicene nanoribbons are one-dimensional materials that hold promise for numerous potential applications in the future. The electric and optical properties of C, Ge-doped armchair silicene nanoribbons are investigated in this study using Density Functional Theory (DFT). All the doped configurations are stable and maintain the honeycomb hexagonal structure after optimization. Doping with C yields flatter structures, while doping with Ge yields larger buckling heights. The C 1-1 doping configuration is highlighted because its band gap is extended up to 2.35 eV, making it an ideal candidate for potential optoelectronic applications. The charge distribution, charge density difference, and hybridization of multiple orbitals are also systematically studied. The optical properties reveal the differences between C and Ge doping, with a clear anisotropy observed. Strong absorption occurs at high electromagnetic wave energies,, while the absorption coefficient rapidly decreases in the long-wavelength range. The study of electron-hole density shows good agreement with the energy band structure, where electron-hole pairs only exist when the excitation energy is greater than the bandgap width, and not all excitation energy values give rise to electron-hole pairs. This study contributes a small part to creating potential applications in nanotechnology.

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“…Furthermore, the optical response in different energy ranges, such as infrared and terahertz frequency regimes of the buckled silicene, [35−37] other than the obtained optical spectra for armchairedge silicene nanoribbons, have been demonstrated recently. [38] However, to date there have been rare theoretical investigations [39,40] on the interesting optical response from infrared to visible for ZSiNRs, and these significant issues are addressed in the present work.…”

mentioning

confidence: 98%

Width-Dependent Optical Properties for Zigzag-Edge Silicene Nanoribbons

Bao¹,

Liao²,

Zhang³

et al. 2018

Chinese Phys. Lett.

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We study theoretically the optical response for perfect zigzag-edge silicene nanoribbons with N silicon atoms of the A and B sublattices (N-ZSiNRs) under the irradiation of an external electromagnetic field at low temperatures. The 8- and 16-ZSiNRs are demonstrated to exhibit a broad energy regime of absorption coefficient, refractive index, extinction coefficient, and reflectivity from infrared to ultraviolet, utilizing the dipole-transition theorem for semiconductors. The optical spectra for 8- and 16-ZSiNRs may be classified into two types of the transitions, one between valence and conduction subbands with the same parity, and the other among the edge state and bulk state subbands. With the increase of the ribbon width, the optical spectra for ZSiNRs are proved to exhibit red shift and blue shift at the lower and higher energy regimes, respectively. The obtained novel features are believed to be of significance in designs of silicene-based optoelectronic devices.

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Field-modulated low-energy electronic and optical properties of armchair silicene nanoribbons

Cited by 12 publications

References 29 publications

Distinct edge states and optical conductivities in the zigzag and armchair silicene nanoribbons under exchange and electric fields

Distinct edge states and optical conductivities in the zigzag and armchair silicene nanoribbons under exchange and electric fields

Electrical and optical properties of C, Ge-doped armchair silicene nanoribbons applied in optoelectronics

Width-Dependent Optical Properties for Zigzag-Edge Silicene Nanoribbons

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