Field-phase modulation of spin-dependent resonant tunneling through a symmetric double-well with spin–orbit coupling

Spin-dependent Breit—Wigner and Fano resonances in photon-assisted electron transport through a semiconductor heterostructure

“…Based on the continuities of 2) , e ± n0 , f ± n0 , and t ± n0 ) can be solved numerically by making use of transfer matrix technique and constructing the Flouquet S matrix. [34,26] The coefficients r ± n0 and t ± n0 are the probability amplitudes of the reflecting waves and outgoing waves from the sideband 0 to sideband n, respectively. Thus, the total electron transmission probabilities of spin + and 067201-3…”

“…Later on, the photon-mediated electron resonance transmission through a symmetric nonmagnetic semiconductor double-well structure with Dresselhaus SOC and two spatially homogeneous oscillating fields having a relative phase difference between them was also investigated. [24,26] It was demonstrated that the spindependent resonance peaks can be controlled by adjusting the relative phase difference between the two applied oscillating fields. In the present work, we will consider a seven-layer semiconductor heterostructure with Dresselhaus SOC and assume that the two spatially homogeneous applied oscillating fields are confined in quantum-well regions.…”

Spin-Selective Resonant Tunneling Induced by Rashba Spin-Orbit Interaction in Semiconductor Nanowire

“…Several recent studies suggest that spin-orbit effect can be exploited for realization of spin-polarization via resonant tunneling without the need of an external magnetic fields neither application of ferromagnetic materials. Such spindependent electron tunneling through a semiconductor barrier is caused by the Rashba [16,[22][23][24][25][26] and/or the Dresselhaus [27][28][29][30][31][32][33][34][35] spin-orbit effect present at the barrier region. Unfortunately these propositions usually do not provide fidelity better than 90 %.…”