Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/led.2019.2953559

Cited by 222 publications

(88 citation statements)

References 23 publications

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“…[10] Vertical fin-structured Schottky barrier diode (SBD), has set the record BV of 2.89 kV with Baliga's figure-of-merit (BFOM) of 0.80 GW/cm 2 (BV 2 /R on,sp ) in DC operation. [11] These advancements in device performance indicate the great potential of β-Ga 2 O 3 in high power electronics, competitive with the traditional wide bandgap semiconductors, such as SiC and GaN.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Feng

Bhuiyan

Xia

et al. 2020

Physica Rapid Research Ltrs

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A new record-high room temperature electron Hall mobility (µ RT = 194 cm 2 /V•s at n ~ 8×10 15 cm -3 ) for β-Ga 2 O 3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of ~9500 cm 2 /V•s is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a β-Ga 2 O 3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties.

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Section: Chemical Vapor Depositionmentioning

confidence: 99%

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Feng

Bhuiyan

Xia

et al. 2020

Physica Rapid Research Ltrs

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“…Accordingly, a significant amount of research is invested in improving the diode performance and hence many advanced edge termination techniques are being developed, including implanted edge termination, field plate, and Fin-type trench structures. State-of-the-art Ga 2 O 3 vertical diodes have acquired a BV of 2.89 kV and DC power figure of merit (P-FOM) of around 1 GW/cm 2 , which are still far less than its theoretical values [13]. For the further development of Ga 2 O 3 , the implementation of p-type materials for PN junction termination is very important for wide band gap materials to alleviate the high field crowding effect at the anode edge.…”

Section: Introductionmentioning

confidence: 94%

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

et al. 2021

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In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga2O3 diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a ~1 V higher turn-on voltage (Von), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO, and the optimal doping concentration of p-NiO is found to be 4 × 1017 cm−3. Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (Ron,sp) of 5705 V/4.3 mΩ·cm2, 3006 V/3.07 mΩ·cm2, and 3004 V/3.06 mΩ·cm2, respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

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“…Ultra-wide-bandgap (UWBG) semiconductor gallium oxide (Ga2O3) is a promising material for next-generation power electronics due to its high critical electrical field (EC), controllable doping, excellent thermal stability, and the availability of large-diameter wafers by the melt growth [1], [2]. Recently, kilovolt-class Ga2O3 Schottky barrier diodes (SBDs) [3], [4] and power FinFETs [5], [6] were demonstrated with a peak electric field (E-field) in Ga2O3, exceeding the EC of GaN and SiC. However, most of the reported Ga2O3 devices have a small current, and only a few large-area Ga2O3 devices have been demonstrated with a current over 1 Amp [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability

Xiao

Wang

Liu

et al. 2021

IEEE Trans. Power Electron.

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Ultra-wide-bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power electronics; however, the low thermal conductivity (kT) of Ga2O3 causes serious concerns about their electrothermal ruggedness. This work presents the first experimental demonstrations of largearea Ga2O3 Schottky barrier diodes (SBDs) packaged in the bottom-side-cooling and double-side-cooling configurations, and for the first time, characterizes the surge current capabilities of these packaged Ga2O3 SBDs. Contrary to popular belief, Ga2O3 SBDs with proper packaging show high surge current capabilities. The double-side-cooled Ga2O3 SBDs with a 3×3 mm 2 Schottky contact area can sustain a peak surge current over 60 A, with a ratio between the peak surge current and the rated current superior to that of similarly-rated commercial SiC SBDs. The key enabling mechanisms for this high surge current are the small temperature dependence of on-resistance, which strongly reduces the thermal runaway, and the double-side-cooled packaging, in which the heat is extracted directly from the Schottky junction and does need to go through the low-kT bulk Ga2O3 chip. These results remove some crucial concerns regarding the electrothermal ruggedness of Ga2O3 power devices and manifest the significance of their die-level thermal management. 1

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Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/$R_{\text{on,sp}}$ of up to 0.95 GW/cm²

Cited by 222 publications

References 23 publications

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability

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Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

Cited by 222 publications

References 23 publications

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability

Contact Info

Product

Resources

About

Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/$R_{\text{on,sp}}$ of up to 0.95 GW/cm²

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability