Field-Plated Lateral Ga<sub>2</sub>O<sub>3</sub> MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

Sharma, Shivam; Zeng, Ke; Saha, Swarna; Singisetti, Uttam

doi:10.1109/led.2020.2991146

Cited by 186 publications

(97 citation statements)

References 26 publications

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“…Given the availability of high quality and large size substrates, the development of electronics devices based on Ga 2 O 3 has been facilitated, and proof of concept of different Ga 2 O 3 power devices have been demonstrated. For instance, a 8.03 kV β-Ga 2 O 3 MOS-FET has been recently demonstrated [123]. Furthermore, regardless of the early stage of Ga 2 O 3 development, Denso Corporation announced the adoption of α-Ga 2 O 3 based semiconductors (provided by FLOSFIA) for its EV power control units targeting commercial production [124], that presumably will take place in the following years.…”

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confidence: 99%

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

et al. 2021

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At present, the energy transition is leading to the replacement of large thermal power plants by distributed renewable generation and the introduction of different assets. Consequently, a massive deployment of power electronics is expected. A particular case will be the devices destined for urban environments and smart grids. Indeed, such applications have some features that make wide bandgap (WBG) materials particularly relevant. This paper analyzes the most important features expected by future smart applications from which the characteristics that their power semiconductors must perform can be deduced. Following, not only the characteristics and theoretical limits of wide bandgap materials already available on the market (SiC and GaN) have been analyzed, but also those currently being researched as promising future alternatives (Ga2O3, AlN, etc.). Finally, wide bandgap materials are compared under the needs determined by the smart applications, determining the best suited to them. We conclude that, although SiC and GaN are currently the only WBG materials available on the semiconductor portfolio, they may be displaced by others such as Ga2O3 in the near future.

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Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

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“…By using sub-μm gate lengths (combined with gate recess) and optimization of compensation-doped high-quality crystals, implantation based inter-device isolation, and SiNx-passivation, breakdown voltages of 1.8 kV and an FOM of 155 MW cm −2 were achieved. In 2020, Sharma et al [ 180 ] reported Ga 2 O 3 lateral D-mode field-plated MOSFETs exhibiting an ultra-high V br of 8.03 kV (70 mm) by using polymer SU8 passivation. The current was rather low, however, due to plasma-induced damage of channel and access regions resulting in an impractical FOM of 7.73 kW cm −2 (i.e., not above the silicon limit).…”

Section: Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

et al. 2022

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

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“…As a beneficial result of the excellent material properties, the Baliga's figure of merit is yielded to be around 3000, which is several times higher than that value of SiC and GaN [6]. However, due to the challenge of acquiring p-type Ga 2 O 3 , most research attention is paid to unipolar devices, including both the lateral and vertical field effect transistors (FETs) and diodes [7][8][9][10][11][12]. In particular, vertical diodes are regarded as the most promising commercial available product within the next 2-3 years.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

et al. 2021

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In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga2O3 diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a ~1 V higher turn-on voltage (Von), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO, and the optimal doping concentration of p-NiO is found to be 4 × 1017 cm−3. Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (Ron,sp) of 5705 V/4.3 mΩ·cm2, 3006 V/3.07 mΩ·cm2, and 3004 V/3.06 mΩ·cm2, respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

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Field-Plated Lateral Ga₂O₃ MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

Cited by 186 publications

References 26 publications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

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Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

Cited by 186 publications

References 26 publications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

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Field-Plated Lateral Ga₂O₃ MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage