2012
DOI: 10.1007/s11090-012-9357-0
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Field Reversal and Particle Growth in DC Discharge

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Cited by 18 publications
(46 citation statements)
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“…INTRODUCTION Although solid particle formation is routinely observed in low pressure DC discharges [1] [2], very little effort has been devoted to the understanding of the processes that lead to their formation. Recently we showed, in the case of graphite cathode argon DC discharge, that particle formation is induced by molecular growth and a subsequent electron attachment of the sputtered carbon species [3].It results in the formation of negatively charged clusters that are trapped in the field reversal of the negative glow and can therefore undergo further growth that end up with solid particle nucleation. This growth mechanism was assessed through a first model that did not take into account the dusty plasma effect, i.e.…”
Section: Abstract-mentioning
confidence: 99%
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“…INTRODUCTION Although solid particle formation is routinely observed in low pressure DC discharges [1] [2], very little effort has been devoted to the understanding of the processes that lead to their formation. Recently we showed, in the case of graphite cathode argon DC discharge, that particle formation is induced by molecular growth and a subsequent electron attachment of the sputtered carbon species [3].It results in the formation of negatively charged clusters that are trapped in the field reversal of the negative glow and can therefore undergo further growth that end up with solid particle nucleation. This growth mechanism was assessed through a first model that did not take into account the dusty plasma effect, i.e.…”
Section: Abstract-mentioning
confidence: 99%
“…the coupling between the discharge equilibrium and the particle aerosol dynamic was not taken into account. Nevertheless, this first model enabled us showing that field reversal effect in the NG plays a key role as far as particle nucleation in DC sputtering discharge is concerned [3]. Then, in a second step, we used a A.…”
Section: Abstract-mentioning
confidence: 99%
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