electronics. [1,2] The FET-based devices are generally triggered or activated by an externally supplied gate voltage, lacking a direct interaction between external environment and electronics. [3,4] To establish the interaction with human/environment, strain-gated transistors based on piezoelectric-semiconductor materials (such as ZnO and GaN) have been developed by utilizing the strain-induced piezoelectric potential to modulate the charge-carrier transport, leading to the emerging field of piezotronics since 2007. [5,6] The piezotronic transistors and logic devices by coupling piezoelectric polarization and semiconductor properties can convert external mechanical stimuli into internal electronic controlling signals and perform piezotronic logic operations. [7,8] They can find important applications in artificial intelligence, human-machine interaction, and communication. [9,10] Recently, triboelectric nanogenerator (TENG) has emerged as a powerful technology for harvesting mechanical energy, [11][12][13][14] with three major applications in micro/nanopower source, self-powered sensors, and blue energy. [15][16][17][18][19][20][21] A new research field of tribotronics was then opened up in 2014, [22,23] using the electrostatic potential created by TENG as a "gate" voltage to tune/control chargecarrier transport in semiconductors. Tribotronics has established a direct interactive mechanism between the external environment and electronics, and has been demonstrated for potential applications in micro/nano-electromechanical systems (MEMS/NEMS), [24] tactile sensors, [25][26][27][28] logic circuits, [29,30] organic memory devices, [31] optoelectronics, [32][33][34][35] and active modulation. [36,37] Despite these published reports, by now the theoretical studies on tribotronic transistor and logic devices are very limited. [38,39] Therefore, constructing a theoretical model to systematically demonstrate the output characteristics of tribotronic devices and provide a deep understanding of their working principles is highly desired.In the present work, a theoretical model was built for a sliding-electrification-gated tribotronic transistor (SGT) by coupling a single-electrode sliding-mode TENG and a metal-oxidesemiconductor field-effect transistor (MOSFET). The performances of the SGT were systematically simulated by the finite element method (FEM), with focus on the N-channel and P-channel SGTs in both enhancement and depletion modes.Triboelectric nanogenerators (TENG) were invented as a highly effective technology for harvesting ambient mechanical energy. By coupling the TENG and metal-oxide-semiconductor field-effect transistor, a new field of tribotronics has been recently proposed using the electrostatic potential created by triboelectrification as a gate voltage to tune/control charge-carrier transport in semiconductors. In this work, the performance of a sliding-electrification-gated tribotronic transistor (SGT) and a sliding-electrification-gated tribotronic logic device (SGL) are theoretically investigated. ...