Figures of uncertainty for noise measurements

Seelmann‐Eggebert, M.; Baldischweiler, B.; Aja, B.; Bruch, Daniel; Maßler, H.

doi:10.1109/arftg.2013.6579033

Cited by 2 publications

(3 citation statements)

References 4 publications

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“…A useful figure of uncertainty of power (FOUP) is the relative mean square deviation defined by

Δ_{M S} P = \sqrt{true \underset{n}{true\sum} 2 \frac{{((), T_{n}^{(M)} - T_{n}^{(C)})}^{2}}{{((), T_{n}^{(M)} + T_{n}^{(C)})}^{2}}}

where the sum runs over all measured states ( n ), in particular hot and cold, and the superscript C refers to calculated values from the extracted noise parameters and the superscript M to the measured temperatures according to (1) to (3). Two more figures of uncertainty have been defined in and account for a possible deviation between calculated and measured available gain, on one hand side, and a potential predominance of the receiver noise, on the other.…”

Section: Experimental Determination Of Noise Parametersmentioning

confidence: 99%

“…It is evident that the measurement situation is almost optimal because the second stage correction to the noise figure by the receiver is small. A quantitative criterion for such shortcomings is given in by a figure of uncertainty for noise. The term that controls the second stage correction is the available gain G AV , DUT of the DUT.…”

Section: Measurement Of Low‐noise Transistorsmentioning

confidence: 99%

“…However, the noise minimum is extremely difficult to verify because the optimum reflection coefficient Γ opt is very close to the edge of the Smith chart and, in consequence, is very difficult to be reached by conventional tuners. Hence, the properties of these devices impose great experimental challenges on the dynamic range of the noise receiver and the range of the tuner .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On the determination of noise parameters of low‐noise transistor devices

Seelmann‐Eggebert

Aja

Baldischweiler

et al. 2015

Int J Numerical Modelling

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In this paper, we discuss the experimental determination of noise parameters for high-electron-mobility transistor (HEMT) devices and analyze the problems encountered with conventional extraction techniques. HEMT devices are distinguished by a very small minimum noise figure of only a fraction of a dB, and this minimum noise is accomplished with a source reflection coefficient very close to the edge of the Smith chart. These properties impede a direct experimental determination of the optimum noise impedance by means of a tuner, and it has to be extrapolated from measurements of a large number of tuner states. Common linear regression techniques are found to yield erroneous results and even may fail completely to determine the noise parameters. We develop criteria to check the uncertainty of the result from the linear regression and show that, in general, the result needs to be examined for consistency. The occasional failure of extraction is traced back to a consistency violation in the conditions the elements of the correlation matrix need to satisfy. A new iterative technique is suggested for the extraction of noise parameters that warrants consistency. Moreover, a correction of the receiver gain is found to be necessary to obtain a good reproduction of the measured power patterns by the extracted noise parameters. This fact was attributed to thermal drift of the receiver

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“…A useful figure of uncertainty of power (FOUP) is the relative mean square deviation defined by