In this work, a photopolymerizable
disulfide monomer containing
C(aryl)–S, disulfanediyl bis(4,1-phenylene) diacrylate (ADSDA),
was designed and synthesized. UV-nanoimprinting lithography photoresists
with no photoinitiator and low polymerization shrinkage were then
prepared with ADSDA and benzyl methacrylate (BMA). The photoresists
with ADSDA exhibited a great photopolymerization capability in the
absence of any photoinitiator, and their double bond conversion reached
up to 86%. With the increase of ADSDA content in the photoresists,
the Young’s modulus, indentation hardness, and thermal stability
of the photoresists all increased first, followed by a slight decrease.
Remarkably, the photoresists with ADSDA had a very low polymerization
shrinkage which dropped to as low as 0.56% because of the “breakage–recombination”
reversible reaction of the S–S bond during the photopolymerization
process. More significantly, the pattern of the original mold with
212 nm line width and 104 nm height could be accurately duplicated
without flaws by the photoresist, which exhibited a prominent pattern
transfer property.