2009
DOI: 10.1007/s11814-009-0137-3
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Film properties of nitrogen-doped polycrystalline silicon for advanced gate material

Abstract: Deposition of N-doped poly-Si films from SiH 4 and NH 3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surface roughness of N-doped Si were greatly affected by the NH 3 /SiH 4 ratio such that they decreased with increasing NH 3 /SiH 4 ratio. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements revealed that with increasing NH 3 /SiH 4 ratio, t… Show more

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