Film stoichiometry and gas dissociation kinetics in hot-wire chemical vapor deposition of a-SiGe:H

Doyle, James R.; Xu, Yueqin; Reedy, R. C.; Branz, Howard M.; Mahan, A. H.

doi:10.1016/j.tsf.2007.06.189

Cited by 8 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These hydrogens interact with filament surface (kept near 2100 o C), dissociate and temporarily bind to it [6] until recombining at with other bound H and leaving as hydrogen molecule. The large concentration of H bound to W filament surface might partially saturate the dissociation sites, which could affect the dissociation of incoming silane [8]. We are currently testing this hypothesis.…”

Section: Resultsmentioning

confidence: 98%

Epitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute

Bobela

Teplin

Young

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

Self Cite

View full text Add to dashboard Cite

We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 μm/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750°C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 µm thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3-µm epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

show abstract

Section: Resultsmentioning

confidence: 98%